Probing the Unique Role of Gallium in Amorphous Oxide Semiconductors through Structure–Property Relationships

Moffitt, Stephanie L.; Zhu, Qimin; Ma, Qing; Falduto, Allison F.; Buchholz, D. Bruce; Chang, Robert H.; Mason, Thomas O.; Medvedeva, Julia E.; Marks, Tobin J.; Bedzyk, Michael J.

doi:10.1002/aelm.201700189

Title: Probing the Unique Role of Gallium in Amorphous Oxide Semiconductors through Structure–Property Relationships

Journal Article · Fri Sep 01 00:00:00 EDT 2017 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201700189· OSTI ID:1406633

Moffitt, Stephanie L. ^[1]; Zhu, Qimin ^[1]; Ma, Qing ^[2]; Falduto, Allison F. ^[1]; Buchholz, D. Bruce ^[1]; Chang, Robert H. ^[1]; Mason, Thomas O. ^[1]; Medvedeva, Julia E. ^[3];

^[4]; Bedzyk, Michael J. ^[5]

Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Materials Research Center
Argonne National Lab. (ANL), Argonne, IL (United States). Northwestern Synchrotron Research Center at the Advanced Photon Source. DND‐CAT
Missouri Univ. of Science and Technology, Rolla, MO (United States). Physics Dept.
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Materials Research Center. Dept. of Chemistry
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering. Materials Research Center. Dept. of Physics and Astronomy

Abstract This study explores the unique role of Ga in amorphous (a‐) InGaO oxide semiconductors through combined theory and experiment. It reveals substitutional effects that have not previously been attributed to Ga, and that are investigated by examining how Ga influences structure–property relationships in a series of pulsed laser deposited a‐InGaO thin films. Element‐specific structural studies (X‐ray absorption and anomalous scattering) show good agreement with the results of ab initio molecular dynamics simulations. This structural knowledge is used to understand the results of air‐annealing and Hall effect electrical measurements. The crystallization temperature of a‐IO is shown to increase by as much as 325 °C on substituting Ga for In. This increased thermal stability is understood on the basis of the large changes in local structure that Ga undergoes, as compared to In, during crystallization. Hall measurements reveal an initial sharp drop in both carrier concentration and mobility with increasing Ga incorporation, which moderates at >20 at% Ga content. This decline in both the carrier concentration and mobility with increasing Ga is attributed to dilution of the charge‐carrying InO matrix and to increased structural disorder. The latter effect saturates at high at% Ga.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-06CH11357; DE‐AC02‐06CH11357

OSTI ID:: 1406633

Alternate ID(s):: OSTI ID: 1378111

Journal Information:: Advanced Electronic Materials, Vol. 3, Issue 10; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: ENGLISH

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Cited by: 25 works

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