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Title: High-precision measurements of the compressibility and the electrical resistivity of bulk g-As2Te3 glasses at a hydrostatic pressure up to 8.5 GPa

Authors:
; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Org.:
FOREIGN
OSTI Identifier:
1406606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Experimental and Theoretical Physics; Journal Volume: 125; Journal Issue: 3
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Brazhkin, V. V., Bychkov, E., and Tsiok, O. B. High-precision measurements of the compressibility and the electrical resistivity of bulk g-As2Te3 glasses at a hydrostatic pressure up to 8.5 GPa. United States: N. p., 2017. Web. doi:10.1134/S1063776117080155.
Brazhkin, V. V., Bychkov, E., & Tsiok, O. B. High-precision measurements of the compressibility and the electrical resistivity of bulk g-As2Te3 glasses at a hydrostatic pressure up to 8.5 GPa. United States. doi:10.1134/S1063776117080155.
Brazhkin, V. V., Bychkov, E., and Tsiok, O. B. 2017. "High-precision measurements of the compressibility and the electrical resistivity of bulk g-As2Te3 glasses at a hydrostatic pressure up to 8.5 GPa". United States. doi:10.1134/S1063776117080155.
@article{osti_1406606,
title = {High-precision measurements of the compressibility and the electrical resistivity of bulk g-As2Te3 glasses at a hydrostatic pressure up to 8.5 GPa},
author = {Brazhkin, V. V. and Bychkov, E. and Tsiok, O. B.},
abstractNote = {},
doi = {10.1134/S1063776117080155},
journal = {Journal of Experimental and Theoretical Physics},
number = 3,
volume = 125,
place = {United States},
year = 2017,
month = 9
}
  • The volumes of glassy germanium chalcogenides GeSe{sub 2}, GeS{sub 2}, Ge{sub 17}Se{sub 83}, and Ge{sub 8}Se{sub 92} are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe{sub 2} and GeS{sub 2} glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2–2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe{sub 2} glasses has a pronounced maximum at 3.5–4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms.more » The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1–2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe{sub 2} glasses. All glasses are characterized by the “loss of memory” of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge{sub 17}Se{sub 83} glasses is 1.5%. The volume of the Ge{sub 8}Se{sub 92} glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge{sub 17}Se{sub 83} and Ge{sub 8}Se{sub 92} glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe{sub 2} glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.« less
  • High-pressure x-ray diffraction studies have been carried out on the two group IV transition metals-based bulk metallic glasses (BMGs) Zr{sub 57}Cu{sub 15.4}Ni{sub 12.6}Al{sub 10}Nb{sub 5} and Ti{sub 42}Zr{sub 24}Cu{sub 15.5}Ni{sub 14.5}Be{sub 4} to a pressure of 30 GPa at ambient temperature in a diamond anvil cell. Image plate x-ray diffraction studies under high pressure were carried out at a synchrotron source and the two BMG diffraction bands can be followed to the highest pressure using an internal copper pressure standard. The amorphous phase is observed to be stable to the highest static pressure of 30 GPa suggesting that the phasemore » change observed in dynamical pressure experiments is related to an increase in temperature. The measured bulk modulus (B{sub 0}) and its pressure derivative (B') are 118 GPa and 3.11 for Zr-based BMG and 116 GPa and 2.84 for Ti-based BMG. The measured bulk modulus for BMG's by x-ray diffraction technique is consistent with the ultrasonic measurements. The decompression data reveal an increase in density by 3%-4% at ambient condition after pressure cycling to 30 GPa indicating reduction in excess free volume.« less
  • The variation in the electrical resistivity of the chalcogenide glasses Ge{sub 15}Te{sub 85-x}In{sub x} has been studied as a function of high pressure for pressures up to 8.5GPa. All the samples studied undergo a semi-conductor to metallic transition in a continuous manner at pressures between 1.5-2.5GPa. The transition pressure at which the samples turn metallic increases with increase in percentage of Indium. This increase is a direct consequence of the increase in network rigidity with the addition of Indium. At a constant pressure of 0.5GPa, the normalized resistivity shows some signature of the existence of the intermediate phase. Samples recoveredmore » after a pressure cycle remain amorphous suggesting that the semi-conductor to metallic transition arises from a reduction of the band gap due to pressure or the movement of the Fermi level into the conduction or valence band.« less
  • The critical behavior of the pressure coefficient of the resistivity has been studied in a large temperature range (6--300 K) under hydrostatic pressure up to 5 kbar. Near the critical temperature T/sub C/, this pressure coefficient reverses its sign. This is explained by the pressure effect on the magnetic order which induces a shift of T/sub C/ towards high temperature. A positive value of the pressure coefficient of the resistivity has been found at low temperatures and at high temperatures. This behavior is observed for the first time in EuO and is explained by transfer of electrons from a higher-mobilitymore » band to a lower-mobility band. Below 60 K, the large decrease in the resistivity with increasing pressure has been explained by pressure effect on the self-trapping phenomenon of the conduction electrons.« less
  • The pressure dependence of the anomalous magnetic component of the electrical resistivity rho/sub magnetic/ of Cu/sub 75/Mn/sub 25/ has been measured for hydrostatic pressures up to 4 kbar over a temperature range of 200--400 K. The short-range atomic order of the spin-glass samples was varied metallurgically (cold worked, quenched, annealed) in a manner that presumably creates and changes the average size of the magnetic clusters. The results are discussed in the context of the magnetic-cluster model for concentrated spin-glass systems, and are found to be inconsistent with a cluster model.