Moving towards the magnetoelectric graphene transistor

Cao, Shi; Xiao, Zhiyong; Kwan, Chun -Pui; Zhang, Kai; Bird, Jonathan P.; Wang, Lu; Mei, Wai -Ning; Hong, Xia; Dowben, P. A.

doi:10.1063/1.4999643

Title: Moving towards the magnetoelectric graphene transistor

Journal Article · Mon Oct 30 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4999643· OSTI ID:1406295

^[1];

^[1]; Kwan, Chun -Pui ^[2]; Zhang, Kai ^[3]; Bird, Jonathan P. ^[4]; Wang, Lu ^[3]; Mei, Wai -Ning ^[5];

^[1];

^[1]

Univ. of Nebraksa-Lincoln, Lincoln, NE (United States)
Univ. at Buffalo, The State Uni. of New York, Buffalo, NY (United States)
Univ. of Science and Technology of China, Anhui (China)
Univ. at Buffalo, The State Univ. of New York, Buffalo, NY (United States)
Univ. of Nebraska at Omaha, Omaha, NE (United States)

Here, the interfacial charge transfer between mechanically exfoliated few-layer graphene and Cr₂O₃ (0001) surfaces has been investigated. Electrostatic force microscopy and Kelvin probe force microscopy studies point to hole doping of few-layer graphene, with up to a 150 meV shift in the Fermi level, an aspect that is confirmed by Raman spectroscopy. Density functional theory calculations furthermore confirm the p-type nature of the graphene/chromia interface and suggest that the chromia is able to induce a significant carrier spin polarization in the graphene layer. A large magnetoelectrically controlled magneto-resistance can therefore be anticipated in transistor structures based on this system, a finding important for developing graphene-based spintronic applications.

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Research Organization:: Univ. of Nebraksa-Lincoln, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0016153

OSTI ID:: 1406295

Alternate ID(s):: OSTI ID: 1406386

Journal Information:: Applied Physics Letters, Vol. 111, Issue 18; Related Information: http://cdn.scitation.org/journals/content/apl/2017/apl.2017.111.issue-18/1.4999643/20171101/suppl/supplementary%20marterialsv2.pdf?b92b4ad1b4f274c70877518610abb28bd756756a6161842cd52fd8f52e9eae516dc5ee147b8bce65758738b212fba58380ff0f8a9d6c7531ed9e0a54fbc248f7f7604325d1c3e31b8c2ffec948b4aab1951645fa835584d08a19fdb68f38427c9cddcd0c898ac29899234e4f5d1575cc584dfec97383ae628335601020a6ce1b4f518a63b14f4d965b517f5ee119d6383fbd0af0e5b5c60ca58b; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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Tuning the electronic and magnetic properties of InSe nanosheets by transition metal doping Wang, Tao; Li, Jianwei; Jin, Hao Physical Chemistry Chemical Physics, Vol. 20, Issue 11 https://doi.org/10.1039/c8cp00219c	journal	January 2018
Spin polarization and tunable valley degeneracy in a MoS ₂ monolayer via proximity coupling to a Cr ₂ O ₃ substrate Zhang, Kai; Wang, Lu; Wu, Xiaojun Nanoscale, Vol. 11, Issue 41 https://doi.org/10.1039/c9nr05698j	journal	January 2019
Magnetoelectric control of topological phases in graphene Takenaka, Hiroyuki; Sandhoefner, Shane; Kovalev, Alexey A. Physical Review B, Vol. 100, Issue 12 https://doi.org/10.1103/physrevb.100.125156	journal	September 2019
Reconfigurable characteristics of graphene plates Moradi, Khatereh; Pourziad, Ali; Nikmehr, Saeid Applied Optics, Vol. 58, Issue 20 https://doi.org/10.1364/ao.58.005415	journal	January 2019

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36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
graphene
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Title: Moving towards the magnetoelectric graphene transistor

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