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Title: Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

Abstract

We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm 2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24% with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.

Authors:
 [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1406185
Report Number(s):
NREL/JA-5J00-68632
Journal ID: ISSN 2156-3381
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
IEEE Journal of Photovoltaics
Additional Journal Information:
Journal Volume: 8; Journal Issue: 1; Journal ID: ISSN 2156-3381
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; gallium arsenide; hydride vapor phase epitaxy; photovoltaics; tunnel junctions

Citation Formats

Ptak, Aaron J., Simon, John D., Schulte, Kevin L., and Jain, Nikhil. Tunnel Junction Development Using Hydride Vapor Phase Epitaxy. United States: N. p., 2017. Web. doi:10.1109/JPHOTOV.2017.2756566.
Ptak, Aaron J., Simon, John D., Schulte, Kevin L., & Jain, Nikhil. Tunnel Junction Development Using Hydride Vapor Phase Epitaxy. United States. doi:10.1109/JPHOTOV.2017.2756566.
Ptak, Aaron J., Simon, John D., Schulte, Kevin L., and Jain, Nikhil. Wed . "Tunnel Junction Development Using Hydride Vapor Phase Epitaxy". United States. doi:10.1109/JPHOTOV.2017.2756566.
@article{osti_1406185,
title = {Tunnel Junction Development Using Hydride Vapor Phase Epitaxy},
author = {Ptak, Aaron J. and Simon, John D. and Schulte, Kevin L. and Jain, Nikhil},
abstractNote = {We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24% with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here in this paper, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.},
doi = {10.1109/JPHOTOV.2017.2756566},
journal = {IEEE Journal of Photovoltaics},
number = 1,
volume = 8,
place = {United States},
year = {Wed Oct 18 00:00:00 EDT 2017},
month = {Wed Oct 18 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 18, 2018
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