Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iVoc >730 mV
Journal Article
·
· IEEE Journal of Photovoltaics
Here, we form gallium-doped poly-Si:Ga/SiO2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al2O3, the contacts exhibit iVoc values of >730 mV with corresponding Joe values of <5 fA/cm2. These are among the best-reported values for p-type poly-Si/SiO2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO2 interface in agreement with its known high diffusivity in SiO2. This lack of Ga pileup may imply fewer dopant-related defects in the SiO2, compared with B dopants, and account for the excellent passivation.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S), SunShot National Laboratory Multiyear Partnership (SuNLaMP); USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1406184
- Report Number(s):
- NREL/JA-5J00-67872
- Journal Information:
- IEEE Journal of Photovoltaics, Vol. 7, Issue 6; ISSN 2156-3381
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 29 works
Citation information provided by
Web of Science
Web of Science
Screen printed, large area bifacial N-type back junction silicon solar cells with selective phosphorus front surface field and boron doped poly-Si/SiO x passivated rear emitter
|
journal | December 2018 |
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