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Title: Switching Characterization of Vertical GaN PiN Diodes.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
OSTI Identifier:
1405261
Report Number(s):
SAND2016-10655C
648511
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Wide Bandgap Power Device and Applications (WiPDA) held November 7-9, 2016 in Fayetteville, AR, United States.
Country of Publication:
United States
Language:
English

Citation Formats

Matthews, Christopher, Flicker, Jack David, Kaplar, Robert, Van Heukelom, Michael, Atcitty, Stanley, Isik Kizilyalli, and Ozgur Aktas. Switching Characterization of Vertical GaN PiN Diodes.. United States: N. p., 2016. Web. doi:10.1109/WiPDA.2016.7799924.
Matthews, Christopher, Flicker, Jack David, Kaplar, Robert, Van Heukelom, Michael, Atcitty, Stanley, Isik Kizilyalli, & Ozgur Aktas. Switching Characterization of Vertical GaN PiN Diodes.. United States. doi:10.1109/WiPDA.2016.7799924.
Matthews, Christopher, Flicker, Jack David, Kaplar, Robert, Van Heukelom, Michael, Atcitty, Stanley, Isik Kizilyalli, and Ozgur Aktas. 2016. "Switching Characterization of Vertical GaN PiN Diodes.". United States. doi:10.1109/WiPDA.2016.7799924. https://www.osti.gov/servlets/purl/1405261.
@article{osti_1405261,
title = {Switching Characterization of Vertical GaN PiN Diodes.},
author = {Matthews, Christopher and Flicker, Jack David and Kaplar, Robert and Van Heukelom, Michael and Atcitty, Stanley and Isik Kizilyalli and Ozgur Aktas},
abstractNote = {Abstract not provided.},
doi = {10.1109/WiPDA.2016.7799924},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month =
}

Conference:
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  • Abstract not provided.
  • Numerical analysis was used to determine the physical mechanisms involved in silicon switching diodes. Plots of values for free carrier densities, current density, electric field, etc. were used in visualizing the operation of these devices. It is concluded that the large initial electric field present in the diode is responsible for its behavior. (JDH)
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