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Title: Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects.

Abstract

Abstract not provided.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1405232
Report Number(s):
SAND2016-10583C
648458
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the RADECS 2016 held September 19-23, 2016 in Bremen, Germany.
Country of Publication:
United States
Language:
English

Citation Formats

Bielejec, Edward S., Pacheco, Jose L, and McLain, Michael Lee. Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects.. United States: N. p., 2016. Web.
Bielejec, Edward S., Pacheco, Jose L, & McLain, Michael Lee. Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects.. United States.
Bielejec, Edward S., Pacheco, Jose L, and McLain, Michael Lee. 2016. "Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects.". United States. doi:. https://www.osti.gov/servlets/purl/1405232.
@article{osti_1405232,
title = {Resistance State Locking in CBRAM Cells Due to Displacement Damage Effects.},
author = {Bielejec, Edward S. and Pacheco, Jose L and McLain, Michael Lee},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month =
}

Conference:
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  • It has been found useful in the past to use the concept of `equivalent fluence` to compare the radiation response of different solar cell technologies. Results are usually given in terms of an equivalent 1 MeV electron or an equivalent 10 MeV proton fluence. To specify cell response in a complex space-radiation environment in terms of an equivalent fluence, it is necessary to measure damage coefficients for a number of representative electron and proton energies. However, at the last Photovoltaic Specialist Conference the authors showed that nonionizing energy loss (NIEL) could be used to correlate damage coefficients for protons, usingmore » measurements for GaAs as an example. This correlation means that damage coefficients for all proton energies except near threshold can be predicted from a measurement made at one particular energy. NIEL is the exact equivalent for displacement damage of linear energy transfer (LET) for ionization energy loss. The use of NIEL in this way leads naturally to the concept of 10 MeV equivalent proton fluence. The situation for electron damage is more complex, however. It is shown that the concept of `displacement damage dose` gives a more general way of unifying damage coefficients. It follows that 1 MeV electron equivalent fluence is a special case of a more general quantity for unifying electron damage coefficients which we call the `effective 1 MeV electron equivalent dose`.« less
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  • Analysis of monoenergetic proton test data reveals displacement damage degradation of charge transfer efficiency in state-of-the-art CCDs. New measurements, in combination with literature data, demonstrate good agreement between the energy dependencies of proton damage and the nonionizing energy loss (NIEL) for protons in Si. Massive shields being considered to preserve CCD performance in satellites are then analyzed using the transport code BRYNTRN which quantifies both primary and secondary particle production. Using NIEL to combine the cumulative effects of both protons and neutrons reaching the CCD, the authors compare Al and Ta shield approaches for both trapped and flare proton environments.more » In general, massive Ta shields have diminished benefit owing to damage from large secondary neutron fluxes. Finally, analysis with Shockley-Read-Hall theory illustrates the importance of CCD operating conditions and transfer efficiency measurement techniques in evaluating flight performance and comparing results between devices and laboratories.« less