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Title: Excitonic Properties of Hexagonal BN Grown by High-Temperature Metal-Organic Vapor Phase Epitaxy.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1404793
Report Number(s):
SAND2016-10148C
648164
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the International Workshop on Nitride Semiconductors (IWN 2016) held October 2-7, 2016 in Orlando, FL.
Country of Publication:
United States
Language:
English

Citation Formats

Crawford, Mary H., Allerman, Andrew A., Rice, Anthony, Beechem, Thomas Edwin,, Ohta, Taisuke, Medlin, Douglas L., Spataru, Dan Catalin, Figiel, Jeffrey J., and Smith, Michael L.. Excitonic Properties of Hexagonal BN Grown by High-Temperature Metal-Organic Vapor Phase Epitaxy.. United States: N. p., 2016. Web.
Crawford, Mary H., Allerman, Andrew A., Rice, Anthony, Beechem, Thomas Edwin,, Ohta, Taisuke, Medlin, Douglas L., Spataru, Dan Catalin, Figiel, Jeffrey J., & Smith, Michael L.. Excitonic Properties of Hexagonal BN Grown by High-Temperature Metal-Organic Vapor Phase Epitaxy.. United States.
Crawford, Mary H., Allerman, Andrew A., Rice, Anthony, Beechem, Thomas Edwin,, Ohta, Taisuke, Medlin, Douglas L., Spataru, Dan Catalin, Figiel, Jeffrey J., and Smith, Michael L.. 2016. "Excitonic Properties of Hexagonal BN Grown by High-Temperature Metal-Organic Vapor Phase Epitaxy.". United States. doi:. https://www.osti.gov/servlets/purl/1404793.
@article{osti_1404793,
title = {Excitonic Properties of Hexagonal BN Grown by High-Temperature Metal-Organic Vapor Phase Epitaxy.},
author = {Crawford, Mary H. and Allerman, Andrew A. and Rice, Anthony and Beechem, Thomas Edwin, and Ohta, Taisuke and Medlin, Douglas L. and Spataru, Dan Catalin and Figiel, Jeffrey J. and Smith, Michael L.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month =
}

Conference:
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  • In this work, the authors investigate the structural properties of (GaIn)(AsN)/GaAs multiple quantum wells (MQW) grown at low temperature by metalorganic vapor phase epitaxy. The structural properties, in particular the In- and N-incorporation, the lattice strain (strain modulation), the structural perfection of the metastable (GaIn)(AsN) material system and the structural quality of the (GaIn)(AsN)/GaAs interfaces are investigated by means of high-resolution x-ray diffraction, transmission electron microscopy (TEM), and secondary ion mass spectrometry. They demonstrate that (GaIn)(AsN) layers of high structural quality can be fabricated up to lattice mismatches of 4%. The experiments reveal that N and In atoms are localizedmore » in the quaternary material and no evidences of In-segregation or N-interdiffusion could be found. TEM analyses reveal a low defect density in the highly strained layers, but no clustering or interface undulation could be detected. High-resolution TEM images show that (GaIn)(AsN)/GaAs interfaces are slightly rougher than GaAs/(GaIn)(AsN) ones.« less
  • Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficientmore » and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.« less
  • The authors have established a correlation between localized states responsible for mid-gap optical emission and film mobility of GaN grown under different nitrogen conditions. By imposing a deflector voltage at the tip of the plasma source, the authors varied the ion-neutral flux ratio to determine how N ions affect mid-gap luminescence and electrical mobility. Low energy electron-excited nanometer scale luminescence (LEEN) spectroscopy in ultrahigh vacuum (UHV) showed mid-gap emission intensities in the bulk that decreased in the ratio, 50:1.3:1 with increasing deflector voltage. Hall measurements indicated over a factor of two increase in mobility, and a factor of 8 decreasemore » in residual charge density with increasing deflector voltage. The correlation of optical and electrical properties with a reduction in N ion flux suggests the primary role of native defects, such as N or Ga vacancies, in the mid-gap emissions.« less
  • No abstract prepared.
  • Gallium nitride (GaN) films have been grown by hydride vapor phase epitaxy (HVPE) in a vertical reactor design. The authors report on GaN growth directly on sapphire using a GaCl surface pretreatment. The electrical properties of these films compare favorably with the highest values reported in the literature for GaN. Specifically, a room temperature Hall mobility as high as 540 cm{sup 2}/V{center_dot}s, with a corresponding carrier concentration of 2 {times} 10{sup 17} cm{sup {minus}3}, have been attained. Additionally, the vertical reactor design has assisted in reducing nonuniformities in both film thickness as well as in transport properties due to depletionmore » effects, as compared with horizontal designs. The dislocation density in these films has been determined by plan-view transmission electron microscopy to be {approximately} 3 {times} 10{sup 8} cm{sup {minus}2}. Photoluminescence spectra obtained at 2 K show intense, sharp, near-band edge emission with minimal deep level emissions.Stimulated emission has been observed in these films, utilizing a nitrogen laser pump source ({lambda} = 337.1 nm) with a threshold pump power of {approximately} 0.5 MW/cm{sup 2}. These results suggest that HVPE is viable for the growth of high-quality nitride films, particularly for the subsequent homoepitaxial overgrowth of device structures by other growth methods such as OMVPE and MBE.« less