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Title: Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1404740
Grant/Contract Number:  
SC0012670
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 14; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Jeongwoo, Jhi, Seung-Hoon, MacDonald, A. H., and Wu, Ruqian. Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.140410.
Kim, Jeongwoo, Jhi, Seung-Hoon, MacDonald, A. H., & Wu, Ruqian. Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators. United States. doi:10.1103/PhysRevB.96.140410.
Kim, Jeongwoo, Jhi, Seung-Hoon, MacDonald, A. H., and Wu, Ruqian. Wed . "Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators". United States. doi:10.1103/PhysRevB.96.140410.
@article{osti_1404740,
title = {Ordering mechanism and quantum anomalous Hall effect of magnetically doped topological insulators},
author = {Kim, Jeongwoo and Jhi, Seung-Hoon and MacDonald, A. H. and Wu, Ruqian},
abstractNote = {},
doi = {10.1103/PhysRevB.96.140410},
journal = {Physical Review B},
number = 14,
volume = 96,
place = {United States},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 25, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 2 works
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Works referenced in this record:

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  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
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Projector augmented-wave method
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Colloquium: Topological insulators
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Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
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