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Title: Thermal emitter comprising near-zero permittivity materials

Abstract

A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.

Inventors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1404708
Patent Number(s):
9,799,798
Application Number:
15/379,786
Assignee:
National Technology & Engineering Solutions of Sandia, LLC SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Resource Relation:
Patent File Date: 2016 Dec 15
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Luk, Ting S., Campione, Salvatore, and Sinclair, Michael B. Thermal emitter comprising near-zero permittivity materials. United States: N. p., 2017. Web.
Luk, Ting S., Campione, Salvatore, & Sinclair, Michael B. Thermal emitter comprising near-zero permittivity materials. United States.
Luk, Ting S., Campione, Salvatore, and Sinclair, Michael B. Wed . "Thermal emitter comprising near-zero permittivity materials". United States. doi:. https://www.osti.gov/servlets/purl/1404708.
@article{osti_1404708,
title = {Thermal emitter comprising near-zero permittivity materials},
author = {Luk, Ting S. and Campione, Salvatore and Sinclair, Michael B.},
abstractNote = {A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Oct 25 00:00:00 EDT 2017},
month = {Wed Oct 25 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

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