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Title: Thermal emitter comprising near-zero permittivity materials

Patent ·
OSTI ID:1404708

A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
National Technology & Engineering Solutions of Sandia, LLC
Patent Number(s):
9,799,798
Application Number:
15/379,786
OSTI ID:
1404708
Resource Relation:
Patent File Date: 2016 Dec 15
Country of Publication:
United States
Language:
English

References (11)

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Strong coupling in hyperbolic metamaterials journal July 2014
Realizing high-quality, ultralarge momentum states and ultrafast topological transitions using semiconductor hyperbolic metamaterials journal January 2015
Thermal radiation of lamellar metal-dielectric metamaterials and metallic surfaces journal January 2015
Charge-Induced Coherence between Intersubband Plasmons in a Quantum Structure journal December 2012