Thermal emitter comprising near-zero permittivity materials
Patent
·
OSTI ID:1404708
A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC
- Patent Number(s):
- 9,799,798
- Application Number:
- 15/379,786
- OSTI ID:
- 1404708
- Country of Publication:
- United States
- Language:
- English
Similar Records
Directional and monochromatic thermal emitter from epsilon-near-zero conditions in semiconductor hyperbolic metamaterials
Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films
Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films
Journal Article
·
2016
· Scientific Reports
·
OSTI ID:1333553
Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films
Journal Article
·
2014
· Applied Physics Letters
·
OSTI ID:1426896
Doping-tunable thermal emission from plasmon polaritons in semiconductor epsilon-near-zero thin films
Journal Article
·
2014
· Applied Physics Letters
·
OSTI ID:22350779