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Title: The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition

Abstract

InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
14041
Report Number(s):
SAND99-2465C
TRN: AH200136%%351
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: The 195th Meeting of the Electrochemical Society, Seattle, WA (US), 05/02/1999--05/06/1999; Other Information: PBD: 16 Sep 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ALLOYS; CARBON TETRACHLORIDE; CHEMICAL VAPOR DEPOSITION; EFFICIENCY; ELECTRONS; ORBITAL SOLAR POWER PLANTS; SOLAR CELLS; TRANSPORT; INGAASN; MOCVD; METALORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOVOLTAICS

Citation Formats

ALLERMAN,ANDREW A., BANKS,JAMES C., GEE,JAMES M., JONES,ERIC D., and KURTZ,STEVEN R. The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition. United States: N. p., 1999. Web.
ALLERMAN,ANDREW A., BANKS,JAMES C., GEE,JAMES M., JONES,ERIC D., & KURTZ,STEVEN R. The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition. United States.
ALLERMAN,ANDREW A., BANKS,JAMES C., GEE,JAMES M., JONES,ERIC D., and KURTZ,STEVEN R. Thu . "The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition". United States. https://www.osti.gov/servlets/purl/14041.
@article{osti_14041,
title = {The Growth of InGaAsN for High Efficiency Solar Cells by Metalorganic Chemical Vapor Deposition},
author = {ALLERMAN,ANDREW A. and BANKS,JAMES C. and GEE,JAMES M. and JONES,ERIC D. and KURTZ,STEVEN R.},
abstractNote = {InGaAsN alloys are a promising material for increasing the efficiency of multi-junction solar cells now used for satellite power systems. However, the growth of these dilute N containing alloys has been challenging with further improvements in material quality needed before the solar cell higher efficiencies are realized. Nitrogen/V ratios exceeding 0.981 resulted in lower N incorporation and poor surface morphologies. The growth rate was found to depend on not only the total group III transport for a fixed N/V ratio but also on the N/V ratio. Carbon tetrachloride and dimethylzinc were effective for p-type doping. Disilane was not an effective n-type dopant while SiCl4 did result in n-type material but only a narrow range of electron concentrations (2-5e17cm{sup -3}) were achieved.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {9}
}

Conference:
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