skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Large magnetoresistance and Fermi surface study of Sb 2Se 2Te single crystal

Abstract

Here, we have studied the magnetotransport properties of a Sb 2Se 2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz–Kosevich formula, are found to be m$$*\atop{β}$$= 0.16m o and m$$*\atop{γ}$$= 0.63m o for the β and γ bands, respectively. The Large MR of Sb 2Se 2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.

Authors:
 [1];  [2];  [3];  [4];  [5]
+ Show Author Affiliations
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  2. Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
  3. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.
  4. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
  5. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T. L. L. Temple Foundation; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)
OSTI Identifier:
1402685
Report Number(s):
INL/JOU-17-43482
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC07-05ID14517; FNI-T-02/26; DMR-1157490
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetoresistance; Quantum Oscillations; Topologic; electronic transport; electronic devices; magnetic ordering; cyclotrons; Fermi surface; geometric phases; quantum optics; spectra; sensors

Citation Formats

Shrestha, K., Marinova, V., Graf, D., Lorenz, B., and Chu, C. W. Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal. United States: N. p., 2017. Web. doi:10.1063/1.4998575.
Copy to clipboard
Shrestha, K., Marinova, V., Graf, D., Lorenz, B., & Chu, C. W. Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal. United States. doi:10.1063/1.4998575.
Copy to clipboard
Shrestha, K., Marinova, V., Graf, D., Lorenz, B., and Chu, C. W. Mon . "Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal". United States. doi:10.1063/1.4998575. https://www.osti.gov/servlets/purl/1402685.
Copy to clipboard
@article{osti_1402685,
title = {Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal},
author = {Shrestha, K. and Marinova, V. and Graf, D. and Lorenz, B. and Chu, C. W.},
abstractNote = {Here, we have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz–Kosevich formula, are found to be m$*\atop{β}$= 0.16mo and m$*\atop{γ}$= 0.63mo for the β and γ bands, respectively. The Large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.},
doi = {10.1063/1.4998575},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.1063/1.4998575
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Topological insulators and superconductors
journal, October 2011

Observation of Dirac Holes and Electrons in a Topological Insulator
journal, June 2011

Topological Crystalline Insulators and Topological Superconductors: From Concepts to Materials
journal, March 2015

Colloquium: Topological insulators
journal, November 2010

Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic
journal, April 2017

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010

Topological transport and atomic tunnelling–clustering dynamics for aged Cu-doped Bi2Te3 crystals
journal, September 2014

  • Chen, Taishi; Chen, Qian; Schouteden, Koen
  • Nature Communications, Vol. 5, Issue 1
  • DOI: 10.1038/ncomms6022

Topological Insulator Materials
journal, October 2013

  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001

Shubnikov–de Haas oscillations from topological surface states of metallic Bi 2 Se 2.1 Te 0.9
journal, December 2014

Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal candidate NbP
journal, June 2015

  • Shekhar, Chandra; Nayak, Ajaya K.; Sun, Yan
  • Nature Physics, Vol. 11, Issue 8
  • DOI: 10.1038/nphys3372

Large bulk resistivity and surface quantum oscillations in the topological insulator Bi 2 Te 2 Se
journal, December 2010

Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi 2 Te 3 Nanosheets
journal, June 2012

Crystal structure and chemistry of topological insulators
journal, January 2013

  • Cava, R. J.; Ji, Huiwen; Fuccillo, M. K.
  • Journal of Materials Chemistry C, Vol. 1, Issue 19
  • DOI: 10.1039/c3tc30186a

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
journal, October 2012

  • Bao, Lihong; He, Liang; Meyer, Nicholas
  • Scientific Reports, Vol. 2, Issue 1
  • DOI: 10.1038/srep00726

Impurity Effect on Weak Antilocalization in the Topological Insulator Bi 2 Te 3
journal, April 2011

Quantum oscillations in metallic Sb 2 Te 2 Se topological insulator
journal, February 2017

First-principles studies of the three-dimensional strong topological insulators Bi 2 Te 3 , Bi 2 Se 3 and Sb 2 Te 3
journal, June 2010

Angular-dependent oscillations of the magnetoresistance in Bi 2 Se 3 due to the three-dimensional bulk Fermi surface
journal, May 2010

Two-dimensional surface state in the quantum limit of a topological insulator
journal, November 2010

  • Analytis, James G.; McDonald, Ross D.; Riggs, Scott C.
  • Nature Physics, Vol. 6, Issue 12
  • DOI: 10.1038/nphys1861

Structural and electronic properties of highly doped topological insulator Bi 2 Se 3 crystals
journal, December 2012

  • Cao, Helin; Xu, Suyang; Miotkowski, Ireneusz
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 7, Issue 1-2
  • DOI: 10.1002/pssr.201206457

Band Structure Engineering in Topological Insulator Based Heterostructures
journal, November 2013

  • Menshchikova, T. V.; Otrokov, M. M.; Tsirkin, S. S.
  • Nano Letters, Vol. 13, Issue 12
  • DOI: 10.1021/nl403312y

Large magnetoresistance in high mobility topological insulator Bi 2 Se 3
journal, July 2013

  • Yan, Yuan; Wang, Li-Xian; Yu, Da-Peng
  • Applied Physics Letters, Vol. 103, Issue 3
  • DOI: 10.1063/1.4813824

Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2
journal, November 2014

  • Liang, Tian; Gibson, Quinn; Ali, Mazhar N.
  • Nature Materials, Vol. 14, Issue 3
  • DOI: 10.1038/nmat4143

The large linear magnetoresistance in Sb 2 Se 2 Te single crystal with extremely low mobility
journal, December 2016

    [ × clear filter / sort ]

    Similar records in OSTI.GOV collections: