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Title: Large magnetoresistance and Fermi surface study of Sb 2Se 2Te single crystal

Abstract

Here, we have studied the magnetotransport properties of a Sb 2Se 2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz–Kosevich formula, are found to be m$$*\atop{β}$$= 0.16m o and m$$*\atop{γ}$$= 0.63m o for the β and γ bands, respectively. The Large MR of Sb 2Se 2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  2. Bulgarian Academy of Sciences, Sofia (Bulgaria). Inst. of Optical Materials and Technology
  3. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.
  4. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics
  5. Univ. of Houston, Houston, TX (United States). Texas Center for Superconductivity (TCSUH) and Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR); T. L. L. Temple Foundation; Bulgaria National Science Fund (BNSF); National Science Foundation (NSF)
OSTI Identifier:
1402685
Report Number(s):
INL/JOU-17-43482
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC07-05ID14517; FNI-T-02/26; DMR-1157490
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 12; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Magnetoresistance; Quantum Oscillations; Topologic; electronic transport; electronic devices; magnetic ordering; cyclotrons; Fermi surface; geometric phases; quantum optics; spectra; sensors

Citation Formats

Shrestha, K., Marinova, V., Graf, D., Lorenz, B., and Chu, C. W. Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal. United States: N. p., 2017. Web. doi:10.1063/1.4998575.
Shrestha, K., Marinova, V., Graf, D., Lorenz, B., & Chu, C. W. Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal. United States. doi:10.1063/1.4998575.
Shrestha, K., Marinova, V., Graf, D., Lorenz, B., and Chu, C. W. Mon . "Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal". United States. doi:10.1063/1.4998575. https://www.osti.gov/servlets/purl/1402685.
@article{osti_1402685,
title = {Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal},
author = {Shrestha, K. and Marinova, V. and Graf, D. and Lorenz, B. and Chu, C. W.},
abstractNote = {Here, we have studied the magnetotransport properties of a Sb2Se2Te single crystal. Magnetoresistance (MR) is maximum when the magnetic field is perpendicular to the sample surface and reaches a value of 1100% at B = 31 T with no sign of saturation. MR shows Shubnikov de Haas (SdH) oscillations above B = 15 T. The frequency spectrum of SdH oscillations consists of three distinct peaks at α = 32 T, β = 80 T, and γ = 117 T indicating the presence of three Fermi surface pockets. Among these frequencies, β is the prominent peak in the frequency spectrum of SdH oscillations measured at different tilt angles of the sample with respect to the magnetic field. From the angle dependence β and Berry phase calculations, we have confirmed the trivial topology of the β-pocket. The cyclotron masses of charge carriers, obtained by using the Lifshitz–Kosevich formula, are found to be m$*\atop{β}$= 0.16mo and m$*\atop{γ}$= 0.63mo for the β and γ bands, respectively. The Large MR of Sb2Se2Te is suitable for utilization in electronic instruments such as computer hard discs, high field magnetic sensors, and memory devices.},
doi = {10.1063/1.4998575},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 122,
place = {United States},
year = {2017},
month = {9}
}

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Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010


Topological Insulator Materials
journal, October 2013

  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001