skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Topological-insulator-based terahertz modulator

Abstract

Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi 1:5Sb 0:5Te 1:8Se 1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.

Authors:
 [1];  [1];  [2];  [2];  [3];  [4];  [2]; ORCiD logo [1]
  1. Nanyang Technological Univ. (Singapore)
  2. National Univ. of Singapore (Singapore)
  3. RMIT Univ., Melbourne, VIC (Australia)
  4. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1402632
Report Number(s):
LA-UR-17-23589
Journal ID: ISSN 2045-2322
Grant/Contract Number:  
AC52-06NA25396
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Wang, X. B., Cheng, L., Wu, Y., Zhu, D. P., Wang, L., Zhu, Jian-Xin, Yang, Hyunsoo, and Chia, Elbert E. M. Topological-insulator-based terahertz modulator. United States: N. p., 2017. Web. doi:10.1038/s41598-017-13701-9.
Wang, X. B., Cheng, L., Wu, Y., Zhu, D. P., Wang, L., Zhu, Jian-Xin, Yang, Hyunsoo, & Chia, Elbert E. M. Topological-insulator-based terahertz modulator. United States. doi:10.1038/s41598-017-13701-9.
Wang, X. B., Cheng, L., Wu, Y., Zhu, D. P., Wang, L., Zhu, Jian-Xin, Yang, Hyunsoo, and Chia, Elbert E. M. Wed . "Topological-insulator-based terahertz modulator". United States. doi:10.1038/s41598-017-13701-9. https://www.osti.gov/servlets/purl/1402632.
@article{osti_1402632,
title = {Topological-insulator-based terahertz modulator},
author = {Wang, X. B. and Cheng, L. and Wu, Y. and Zhu, D. P. and Wang, L. and Zhu, Jian-Xin and Yang, Hyunsoo and Chia, Elbert E. M.},
abstractNote = {Three dimensional topological insulators, as a new phase of quantum matters, are characterized by an insulating gap in the bulk and a metallic state on the surface. Particularly, most of the topological insulators have narrow band gaps, and hence have promising applications in the area of terahertz optoelectronics. In this work, we experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators. A relative frequency-independent modulation depth of ~62% over a wide frequency range from 0.3 to 1.4 THz has been achieved at room temperature, by applying a bias current of 100 mA. The modulation in the low current regime can be further enhanced at low temperature. We propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. Our work provides a new application of topological insulators for terahertz technology.},
doi = {10.1038/s41598-017-13701-9},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {Wed Oct 18 00:00:00 EDT 2017},
month = {Wed Oct 18 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009


Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009

  • Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
  • Nature Physics, Vol. 5, Issue 6, p. 438-442
  • DOI: 10.1038/nphys1270

Active terahertz metamaterial devices
journal, November 2006

  • Chen, Hou-Tong; Padilla, Willie J.; Zide, Joshua M. O.
  • Nature, Vol. 444, Issue 7119, p. 597-600
  • DOI: 10.1038/nature05343