skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantum oscillations in metallic Sb 2 Te 2 Se topological insulator

Abstract

Here, we have studied the magnetotransport properties of the metallic, p-type Sb 2Te 2Se, which is a topological insulator. Magnetoresistance shows Shubnikov–de Haas oscillations in fields above B = 15 T. The maxima and minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcosθ, implying the existence of a two-dimensional Fermi surface in Sb 2Te 2Se. The value of the Berry phase β determined from a Landau level fan diagram is very close to 0.5, further suggesting that the oscillations result from topological surface states. From Lifshitz-Kosevich analyses, the position of the Fermi level is found to be F = 250 meV, above the Dirac point. This value of F is almost 3 times larger than that in our previous study on the Bi 2Se 2.1Te 0.9 topological insulator; however, it still touches the tip of the bulk valence band. This explains the metallic behavior and holelike bulk charge carriers in the Sb 2Te 2Se compound.

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
  2. Bulgarian Academy of Sciences, Sofia (Bulgaria)
  3. Florida State Univ., Tallahassee, FL (United States)
  4. Univ. of Houston, Houston, TX (United States)
  5. Univ. of Houston, Houston, TX (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1402500
Alternate Identifier(s):
OSTI ID: 1342443
Report Number(s):
INL/JOU-17-41200
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:  
AC07-05ID14517; DOE FG02-01ER45872
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 95; Journal Issue: 7; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; surface states; topological insulator

Citation Formats

Shrestha, Keshav, Marinova, V., Graf, D., Lorenz, B., and Chu, C. W. Quantum oscillations in metallic Sb2Te2Se topological insulator. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.95.075102.
Shrestha, Keshav, Marinova, V., Graf, D., Lorenz, B., & Chu, C. W. Quantum oscillations in metallic Sb2Te2Se topological insulator. United States. doi:10.1103/PhysRevB.95.075102.
Shrestha, Keshav, Marinova, V., Graf, D., Lorenz, B., and Chu, C. W. Wed . "Quantum oscillations in metallic Sb2Te2Se topological insulator". United States. doi:10.1103/PhysRevB.95.075102. https://www.osti.gov/servlets/purl/1402500.
@article{osti_1402500,
title = {Quantum oscillations in metallic Sb2Te2Se topological insulator},
author = {Shrestha, Keshav and Marinova, V. and Graf, D. and Lorenz, B. and Chu, C. W.},
abstractNote = {Here, we have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se, which is a topological insulator. Magnetoresistance shows Shubnikov–de Haas oscillations in fields above B = 15 T. The maxima and minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcosθ, implying the existence of a two-dimensional Fermi surface in Sb2Te2Se. The value of the Berry phase β determined from a Landau level fan diagram is very close to 0.5, further suggesting that the oscillations result from topological surface states. From Lifshitz-Kosevich analyses, the position of the Fermi level is found to be F = 250 meV, above the Dirac point. This value of F is almost 3 times larger than that in our previous study on the Bi2Se2.1Te0.9 topological insulator; however, it still touches the tip of the bulk valence band. This explains the metallic behavior and holelike bulk charge carriers in the Sb2Te2Se compound.},
doi = {10.1103/PhysRevB.95.075102},
journal = {Physical Review B},
number = 7,
volume = 95,
place = {United States},
year = {Wed Feb 01 00:00:00 EST 2017},
month = {Wed Feb 01 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010


Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009


Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010


Topological Insulator Materials
journal, October 2013

  • Ando, Yoichi
  • Journal of the Physical Society of Japan, Vol. 82, Issue 10, Article No. 102001
  • DOI: 10.7566/JPSJ.82.102001