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Title: Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide

Abstract

The atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H 2-plasma pretreatment of the Au substrate prior to gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al 2O 3 ALD inhibition. This is the first example of Al 2O 3 ALD inhibition from a vapor-deposited SAM. Inhibition of Al 2O 3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. As a result, atomic force microscopy (AFM) and grazing incidence x-ray fluorescence (GIXRF) further reveals insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.

Authors:
 [1];  [2];  [1]; ORCiD logo [1]
  1. Argonne National Lab. (ANL), Lemont, IL (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States); Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1402052
Grant/Contract Number:
AC02-06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 9; Journal Issue: 39; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY; Self-Assembled Monolayers; Alkanethiols; Aluminum Oxide; Atomic Layer Deposition; Manganese Oxide; Metal Oxides; Selective Deposition; Zinc Oxide

Citation Formats

Sampson, Matthew D., Emery, Jonathan D., Pellin, Michael J., and Martinson, Alex B. F.. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide. United States: N. p., 2017. Web. doi:10.1021/acsami.7b01410.
Sampson, Matthew D., Emery, Jonathan D., Pellin, Michael J., & Martinson, Alex B. F.. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide. United States. doi:10.1021/acsami.7b01410.
Sampson, Matthew D., Emery, Jonathan D., Pellin, Michael J., and Martinson, Alex B. F.. Wed . "Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide". United States. doi:10.1021/acsami.7b01410. https://www.osti.gov/servlets/purl/1402052.
@article{osti_1402052,
title = {Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide},
author = {Sampson, Matthew D. and Emery, Jonathan D. and Pellin, Michael J. and Martinson, Alex B. F.},
abstractNote = {The atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. Inhibition of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. As a result, atomic force microscopy (AFM) and grazing incidence x-ray fluorescence (GIXRF) further reveals insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.},
doi = {10.1021/acsami.7b01410},
journal = {ACS Applied Materials and Interfaces},
number = 39,
volume = 9,
place = {United States},
year = {Wed Apr 05 00:00:00 EDT 2017},
month = {Wed Apr 05 00:00:00 EDT 2017}
}

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