Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

Li, Dawei; Xiao, Zhiyong; Golgir, Hossein Rabiee; Jiang, Lijia; Singh, Vijay Raj; Keramatnejad, Kamran; Smith, Kevin E.; Hong, Xia; Jiang, Lan; Silvain, Jean-Francois; Lu, Yongfeng

doi:10.1002/aelm.201600335

Title: Large-Area 2D/3D MoS₂-MoO₂ Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

Journal Article · Wed Apr 26 00:00:00 EDT 2017 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201600335· OSTI ID:1533054

Li, Dawei ^[1]; Xiao, Zhiyong ^[1]; Golgir, Hossein Rabiee ^[1]; Jiang, Lijia ^[1]; Singh, Vijay Raj ^[2]; Keramatnejad, Kamran ^[1]; Smith, Kevin E. ^[2]; Hong, Xia ^[1]; Jiang, Lan ^[3]; Silvain, Jean-Francois ^[4]; Lu, Yongfeng ^[1]

Univ. of Nebraska, Lincoln, NE (United States)
Boston Univ., MA (United States)
Beijing Inst. of Technology, Beijing (China)
Inst. de Chimie de la Matière Condensée de Bordeaux (France)

To date, scale-up fabrication of transition metal dichalcogenide (TMD-) based 2D/2D or 2D/3D heterostructures with specific functionalities is still a great challenge. This study, for the first time, reports on the controllable synthesis of large-area and continuous 2D/3D semiconductor/metal heterostructures consisting of monolayer MoS₂ and bulk MoO₂ with unique electrical and optical properties via one-step, vapor-transport-assisted rapid thermal processing. The temperature-dependent electrical transport measurements reveal that the 2D/3D MoS₂–MoO₂ heterostructure grown on SiO₂/Si substrates exhibits metallic phase, while this heterostructure becomes a low-resistance semiconductor when it is grown on fused silica, which is attributed to the different degrees of sulfurization on different substrates, as being confirmed by surface potential analyses. Photoluminescence measurements taken on the MoS₂–MoO₂ heterostructures reveal the simultaneous presence of both negative trions and neutral excitons, while only neutral excitons are observed in the monolayer MoS₂. The trion-binding energy is determined to be ≈27 meV, and the trion signal persists up to 330 K, indicating significant stability at room temperature. This work not only provides a new platform for understanding the intriguing physics in TMD-based heterostructures but also enables the design of more complicated devices with potential applications in nanoelectronics and nanophotonics.

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Research Organization:: Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0016153

OSTI ID:: 1533054

Alternate ID(s):: OSTI ID: 1401783

Journal Information:: Advanced Electronic Materials, Vol. 3, Issue 7; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 22 works

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References (54)

Mixed-dimensional van der Waals heterostructures Jariwala, Deep; Marks, Tobin J.; Hersam, Mark C. Nature Materials, Vol. 16, Issue 2 https://doi.org/10.1038/nmat4703	journal	August 2016
A study of single-layer and restacked MoS ₂ by X-ray diffraction and X-ray absorption spectroscopy Joensen, P.; Crozier, E. D.; Alberding, N. Journal of Physics C: Solid State Physics, Vol. 20, Issue 26 https://doi.org/10.1088/0022-3719/20/26/009	journal	September 1987
Layer-number-dependent work function of MoS2 nanoflakes Choi, SooHo; Shaolin, Zhang; Yang, Woochul Journal of the Korean Physical Society, Vol. 64, Issue 10 https://doi.org/10.3938/jkps.64.1550	journal	May 2014
Multimodal Nonlinear Optical Imaging of MoS ₂ and MoS ₂ -Based van der Waals Heterostructures Li, Dawei; Xiong, Wei; Jiang, Lijia ACS Nano, Vol. 10, Issue 3 https://doi.org/10.1021/acsnano.6b00371	journal	February 2016
Two-Step Growth of Two-Dimensional WSe ₂ /MoSe ₂ Heterostructures Gong, Yongji; Lei, Sidong; Ye, Gonglan Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b02423	journal	August 2015
Nonvolatile Memory Cells Based on MoS ₂ /Graphene Heterostructures Bertolazzi, Simone; Krasnozhon, Daria; Kis, Andras ACS Nano, Vol. 7, Issue 4 https://doi.org/10.1021/nn3059136	journal	March 2013
The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures Wang, Han; Bang, Junhyeok; Sun, Yiyang Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11504	journal	May 2016
Excitons in atomically thin black phosphorus Surrente, A.; Mitioglu, A. A.; Galkowski, K. Physical Review B, Vol. 93, Issue 12 https://doi.org/10.1103/PhysRevB.93.121405	journal	March 2016
The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 Buscema, Michele; Steele, Gary A.; van der Zant, Herre S. J. Nano Research, Vol. 7, Issue 4 https://doi.org/10.1007/s12274-014-0424-0	journal	April 2014
Valley-polarized exciton dynamics in a 2D semiconductor heterostructure Rivera, P.; Seyler, K. L.; Yu, H. Science, Vol. 351, Issue 6274 https://doi.org/10.1126/science.aac7820	journal	February 2016
Transport in gapped bilayer graphene: The role of potential fluctuations Zou, K.; Zhu, J. Physical Review B, Vol. 82, Issue 8 https://doi.org/10.1103/PhysRevB.82.081407	journal	August 2010
Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride Ruzmetov, Dmitry; Zhang, Kehao; Stan, Gheorghe ACS Nano, Vol. 10, Issue 3 https://doi.org/10.1021/acsnano.5b08008	journal	February 2016
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition Zhu, Wenjuan; Low, Tony; Lee, Yi-Hsien Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms4087	journal	January 2014
Effect of SiO2 incorporation on stability and work function of conducting MoO2 Liang, Y.; Tracy, C.; Weisbrod, E. Applied Physics Letters, Vol. 88, Issue 8 https://doi.org/10.1063/1.2176859	journal	February 2006
Graphene/MoS ₂ Heterostructures for Ultrasensitive Detection of DNA Hybridisation Loan, Phan Thi Kim; Zhang, Wenjing; Lin, Cheng-Te Advanced Materials, Vol. 26, Issue 28 https://doi.org/10.1002/adma.201401084	journal	May 2014
Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing Advanced Materials, Vol. 24, Issue 17, p. 2320-2325 https://doi.org/10.1002/adma.201104798	journal	March 2012
A WSe ₂ /MoSe ₂ heterostructure photovoltaic device Flöry, Nikolaus; Jain, Achint; Bharadwaj, Palash Applied Physics Letters, Vol. 107, Issue 12 https://doi.org/10.1063/1.4931621	journal	September 2015
Electrical Transport Properties of Single-Layer WS ₂ Ovchinnikov, Dmitry; Allain, Adrien; Huang, Ying-Sheng ACS Nano, Vol. 8, Issue 8 https://doi.org/10.1021/nn502362b	journal	July 2014
Van der Waals stacked 2D layered materials for optoelectronics Zhang, Wenjing; Wang, Qixing; Chen, Yu 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/022001	journal	April 2016
The hot pick-up technique for batch assembly of van der Waals heterostructures Pizzocchero, Filippo; Gammelgaard, Lene; Jessen, Bjarke S. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11894	journal	June 2016
Electrical control of neutral and charged excitons in a monolayer semiconductor Ross, Jason S.; Wu, Sanfeng; Yu, Hongyi Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2498	journal	February 2013
Fundamentals of lateral and vertical heterojunctions of atomically thin materials Pant, Anupum; Mutlu, Zafer; Wickramaratne, Darshana Nanoscale, Vol. 8, Issue 7 https://doi.org/10.1039/C5NR08982D	journal	January 2016
From MoO ₃ Nanobelts to MoO ₂ Nanorods: Structure Transformation and Electrical Transport Hu, Bin; Mai, Liqiang; Chen, Wen ACS Nano, Vol. 3, Issue 2 https://doi.org/10.1021/nn800844h	journal	January 2009
Atomically thin p–n junctions with van der Waals heterointerfaces Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M. Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.150	journal	August 2014
Radiative lifetime of free excitons in quantum wells Andreani, Lucio Claudio; Tassone, Francesco; Bassani, Franco Solid State Communications, Vol. 77, Issue 9 https://doi.org/10.1016/0038-1098(91)90761-J	journal	March 1991
Temperature dependence of semiconductor band gaps O’Donnell, K. P.; Chen, X. Applied Physics Letters, Vol. 58, Issue 25 https://doi.org/10.1063/1.104723	journal	June 1991
Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M. Nature Materials, Vol. 13, Issue 12, p. 1096-1101 https://doi.org/10.1038/nmat4064	journal	August 2014
Vertical 2D Heterostructures Lotsch, Bettina V. Annual Review of Materials Research, Vol. 45, Issue 1 https://doi.org/10.1146/annurev-matsci-070214-020934	journal	July 2015
Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan Applied Physics Letters, Vol. 105, Issue 21 https://doi.org/10.1063/1.4902814	journal	November 2014
Two-dimensional heterostructures: fabrication, characterization, and application Wang, Hong; Liu, Fucai; Fu, Wei Nanoscale, Vol. 6, Issue 21 https://doi.org/10.1039/C4NR03435J	journal	January 2014
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe₂ versus MoS₂ Tongay, Sefaattin; Zhou, Jian; Ataca, Can Nano Letters, Vol. 12, Issue 11, p. 5576-5580 https://doi.org/10.1021/nl302584w	journal	October 2012
Controlled Synthesis of Highly Crystalline MoS ₂ Flakes by Chemical Vapor Deposition Wang, Xinsheng; Feng, Hongbin; Wu, Yongmin Journal of the American Chemical Society, Vol. 135, Issue 14 https://doi.org/10.1021/ja4013485	journal	March 2013
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface Li, M. -Y.; Shi, Y.; Cheng, C. -C. Science, Vol. 349, Issue 6247 https://doi.org/10.1126/science.aab4097	journal	July 2015
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films Britnell, L.; Ribeiro, R. M.; Eckmann, A. Science, Vol. 340, Issue 6138 https://doi.org/10.1126/science.1235547	journal	May 2013
Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers Gong, Yongji; Lin, Junhao; Wang, Xingli Nature Materials, Vol. 13, Issue 12, p. 1135-1142 https://doi.org/10.1038/nmat4091	journal	September 2014
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS ₂ Heterostructure Devices Rathi, Servin; Lee, Inyeal; Lim, Dongsuk Nano Letters, Vol. 15, Issue 8 https://doi.org/10.1021/acs.nanolett.5b01030	journal	July 2015
Light Generation and Harvesting in a van der Waals Heterostructure Lopez-Sanchez, Oriol; Alarcon Llado, Esther; Koman, Volodymyr ACS Nano, Vol. 8, Issue 3 https://doi.org/10.1021/nn500480u	journal	March 2014
Ordered Mesoporous Metallic MoO ₂ Materials with Highly Reversible Lithium Storage Capacity Shi, Yifeng; Guo, Bingkun; Corr, Serena A. Nano Letters, Vol. 9, Issue 12 https://doi.org/10.1021/nl902423a	journal	December 2009
Excitonic interconnects Baldo, Marc; Stojanović, Vladimir Nature Photonics, Vol. 3, Issue 10 https://doi.org/10.1038/nphoton.2009.178	journal	October 2009
Heterojunction Hybrid Devices from Vapor Phase Grown MoS2 Yim, Chanyoung; O'Brien, Maria; McEvoy, Niall Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep05458	journal	June 2014
Photoluminescence of monolayer MoS ₂ on LaAlO ₃ and SrTiO ₃ substrates Li, Yuanyuan; Qi, Zeming; Liu, Miao Nanoscale, Vol. 6, Issue 24 https://doi.org/10.1039/C4NR04602A	journal	January 2014
Chemical Sensing of 2D Graphene/MoS ₂ Heterostructure device Cho, Byungjin; Yoon, Jongwon; Lim, Sung Kwan ACS Applied Materials & Interfaces, Vol. 7, Issue 30 https://doi.org/10.1021/acsami.5b04541	journal	July 2015
Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.167	journal	August 2014
Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS ₂ and WS ₂ Huo, Nengjie; Wei, Zhongming; Meng, Xiuqing Journal of Materials Chemistry C, Vol. 3, Issue 21 https://doi.org/10.1039/C5TC00698H	journal	January 2015
Physical and chemical tuning of two-dimensional transition metal dichalcogenides Wang, Haotian; Yuan, Hongtao; Sae Hong, Seung Chemical Society Reviews, Vol. 44, Issue 9 https://doi.org/10.1039/C4CS00287C	journal	January 2015
Tightly bound trions in monolayer MoS2 Mak, Kin Fai; He, Keliang; Lee, Changgu Nature Materials, Vol. 12, Issue 3 https://doi.org/10.1038/nmat3505	journal	December 2012
Layer-transferred MoS ₂ /GaN PN diodes Lee, Edwin W.; Lee, Choong Hee; Paul, Pran K. Applied Physics Letters, Vol. 107, Issue 10 https://doi.org/10.1063/1.4930234	journal	September 2015
Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction Furchi, Marco M.; Pospischil, Andreas; Libisch, Florian Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl501962c	journal	July 2014
A subthermionic tunnel field-effect transistor with an atomically thin channel Sarkar, Deblina; Xie, Xuejun; Liu, Wei Nature, Vol. 526, Issue 7571 https://doi.org/10.1038/nature15387	journal	September 2015
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials Yu, Woo Jong; Liu, Yuan; Zhou, Hailong Nature Nanotechnology, Vol. 8, Issue 12 https://doi.org/10.1038/nnano.2013.219	journal	October 2013
3D Band Diagram and Photoexcitation of 2D–3D Semiconductor Heterojunctions Li, Bo; Shi, Gang; Lei, Sidong Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b02012	journal	August 2015
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Control of valley polarization in monolayer MoS2 by optical helicity Mak, Kin Fai; He, Keliang; Shan, Jie Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.96	journal	June 2012

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Title: Large-Area 2D/3D MoS2-MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

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Title: Large-Area 2D/3D MoS₂-MoO₂ Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors