Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Stanford, Michael G.; Pudasaini, Pushpa R.; Cross, Nicholas; Mahady, Kyle; Hoffman, Anna N.; Mandrus, David G.; Duscher, Gerd; Chisholm, Matthew F.; Rack, Philip D.

doi:10.1002/smtd.201600060

Title: Tungsten Diselenide Patterning and Nanoribbon Formation by Gas‐Assisted Focused‐Helium‐Ion‐Beam‐Induced Etching

Journal Article · Fri Feb 24 00:00:00 EST 2017 · Small Methods

DOI:https://doi.org/10.1002/smtd.201600060· OSTI ID:1401760

Stanford, Michael G. ^[1]; Pudasaini, Pushpa R. ^[1]; Cross, Nicholas ^[1]; Mahady, Kyle ^[1]; Hoffman, Anna N. ^[1]; Mandrus, David G. ^[2]; Duscher, Gerd ^[2]; Chisholm, Matthew F. ^[3]; Rack, Philip D. ^[4]

Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA
Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA, Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA
Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA
Department of Materials Science and Engineering University of Tennessee Knoxville TN 37996 USA, Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

A gas‐assisted focused‐helium‐ion beam‐induced etching (FIBIE) process is introduced, which accelerates direct‐write patterning of WSe ₂ relative to standard ion milling. The etching process utilizes the XeF ₂ precursor molecule to provide a chemical assist for enhanced material removal relative to ion sputtering. The FIBIE process enables high‐fidelity patterning of WSe ₂ with doses 5× lower than standard He ⁺ milling. This enables the formation of high‐resolution WSe ₂ nanoribbons with dimensions less than 10 nm. The WSe ₂ nanoribbons demonstrate high Raman anisotropy and nanoribbon electrical measurements are reported for the first time. The normalized on‐currents of field‐effect transistors reveal that the electron and hole currents are both suppressed and scale with the nanoribbon width, with the electron transport experiencing more degradation. However, on‐currents of nanoribbons created by the FIBIE process remain orders of magnitude greater than nanoribbons formed by standard He ⁺ milling. Scanning transmission electron microscopy and complementary Monte Carlo ion–solid simulations reveal that the reduced currents are partially due to ion‐induced damage in the WSe ₂ .

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DOE DE‐SC0002136

OSTI ID:: 1401760

Journal Information:: Small Methods, Journal Name: Small Methods Vol. 1 Journal Issue: 4; ISSN 2366-9608

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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