Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO3/SrTiO3 Interface Structures

Davis, Samuel Kenneth; Huang, Zhen; Han, Kun; Ariando, None; Venkatesan, Thirumalai; Chandrasekhar, Venkat

doi:10.1002/admi.201600830

Title: Electrical Transport Anisotropy Controlled by Oxygen Vacancy Concentration in (111) LaAlO₃/SrTiO₃ Interface Structures

Journal Article · Fri Dec 02 00:00:00 EST 2016 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201600830· OSTI ID:1533048

Davis, Samuel Kenneth ^[1]; Huang, Zhen ^[2]; Han, Kun ^[2]; Ariando, None ^[2]; Venkatesan, Thirumalai ^[2]; Chandrasekhar, Venkat ^[1]

Northwestern Univ., Evanston, IL (United States)
National Univ. of Singapore (Singapore)

The two dimensional conducting gas that forms at the interface between the two insulators LaAlO₃ (LAO) and SrTiO₃ (STO)1, 2 has garnered a lot of attention due to wide variety of physical phenomena that it exhibits, including strong spin–orbit coupling,3, 4 superconductivity,5-8 magnetism,7-12 and localization effects,13 among others. From the earliest studies,1 it has been well established that the conditions during film growth or the post-growth treatment of samples can have a substantial effect on the properties of the interface. In particular, the amount of oxygen vacancies introduced during growth or through post-growth treatment can change the conductance of the LAO/STO interface by orders of magnitude.2, 13-17 Experiments on bulk STO18 samples and STO films19 indicate that the enhanced conduction induced by oxygen vacancies is associated with defect states introduced in the band gap of the STO at the interface, adding donor levels close to the STO conduction band edge, and acceptor levels near the valence band.18, 19 All of these earlier studies were performed on samples grown in the (001) crystal orientation. Here we report studies of the effects of various post-growth treatments on the transport properties of (111) oriented LAO/STO interface structures, which have been shown to exhibit a strong anisotropy of their properties along different crystal directions.20 As with the (001) samples, we find that the presence of oxygen vacancies increases the conductance of the interface, but at the same time also substantially decreases the anisotropy. This suggests that the defect states introduced by oxygen vacancies contribute isotropically to charge transport, partially masking the strongly anisotropic contribution of the intrinsic bands. In addition, our work shows that one can reversibly tune the transport properties of LAO/STO interface samples by applying appropriate post-growth treatment.

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Research Organization:: Northwestern Univ., Evanston, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-06ER46346; DEFG02-06ER46346

OSTI ID:: 1533048

Alternate ID(s):: OSTI ID: 1401725

Journal Information:: Advanced Materials Interfaces, Vol. 4, Issue 3; ISSN 2196-7350

Publisher:: Wiley-VCHCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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References (23)

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Cited By (2)

Electrostatic tuning of magnetism at the conducting (111) (La _0.3 Sr _0.7 )(Al _0.65 Ta _0.35 )/SrTiO ₃ interface Bal, V. V.; Huang, Z.; Han, K. Applied Physics Letters, Vol. 111, Issue 8 https://doi.org/10.1063/1.4986912	journal	August 2017
Photoresponsive properties at (0 0 1), (1 1 1) and (1 1 0) LaAlO ₃ /SrTiO ₃ interfaces Yan, Hong; Zhang, Zhaoting; Li, Ming Journal of Physics: Condensed Matter, Vol. 32, Issue 13 https://doi.org/10.1088/1361-648x/ab5ebf	journal	December 2019

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