The Distortion‐Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc 1− x M x )F 3 (M = Al, Fe)

Han, Fei; Chen, Jun; Hu, Lei; Ren, Yang; Rong, Yangchun; Pan, Zhao; Deng, Jinxia; Xing, Xianran; White, ed., M. A.

doi:10.1111/jace.14399

Title: The Distortion‐Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc _{1− x} M _x )F ₃ (M = Al, Fe)

Journal Article · Thu Jul 28 00:00:00 EDT 2016 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/jace.14399· OSTI ID:1401694

Han, Fei ^[1]; Chen, Jun ^[1]; Hu, Lei ^[1]; Ren, Yang ^[2]; Rong, Yangchun ^[1]; Pan, Zhao ^[1]; Deng, Jinxia ^[1]; Xing, Xianran ^[1]; White, ed., M. A.

Department of Physical Chemistry University of Science and Technology Beijing Beijing 100083 China
Argonne National Laboratory X‐Ray Science Division Argonne Illinois 60439

For the study of negative thermal expansion (NTE) compounds, it is critical to effectively control the thermal expansion. In this letter, a chemical approach has been taken to control the thermal expansion behavior in ScF ₃ which has a strong NTE. Owing to the difference of radius of substituting ions, local distortion inevitably emerges in the lattice matrix, which is verified by pair distribution function analysis of high‐resolution synchrotron X‐ray scattering. It is a valuable clue that the thermal expansion behaviors in the ScF ₃ based systems and other trifluorides are correlated closely to structural distortion of metal‐F‐metal linkages. In addition, the introduction of 3 d transition‐metal enables its semiconductor and ferromagnetic characteristics. This study provides important reference opinion for the control of thermal expansion and introduction of multifunctionalization for those NTE compounds with open framework structure.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC02‐06CH11357

OSTI ID:: 1401694

Journal Information:: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Vol. 99 Journal Issue: 9; ISSN 0002-7820

Publisher:: Wiley-BlackwellCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 14 works

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Title: The Distortion‐Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc _{1− x} M _x )F ₃ (M = Al, Fe)