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Title: Inkjet Printing of Single-Crystalline Bi 2 Te 3 Thermoelectric Nanowire Networks

Authors:
 [1];  [1];  [2];  [1];  [2];  [2];  [2];  [1];  [2];  [1]
  1. Mechanical Engineering, Iowa State University, Ames IA 50011 USA
  2. Chemical and Biological Engineering, Iowa State University, Ames IA 50011 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1401521
Grant/Contract Number:
DENE0000671; EE0007686
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Volume: 3; Journal Issue: 4; Related Information: CHORUS Timestamp: 2017-10-20 17:00:53; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Bolin, Das, Suprem R., Zheng, Wei, Zhu, Bowen, Xu, Biao, Hong, Sungbum, Sun, Chenghan, Wang, Xinwei, Wu, Yue, and Claussen, Jonathan C. Inkjet Printing of Single-Crystalline Bi 2 Te 3 Thermoelectric Nanowire Networks. United States: N. p., 2017. Web. doi:10.1002/aelm.201600524.
Chen, Bolin, Das, Suprem R., Zheng, Wei, Zhu, Bowen, Xu, Biao, Hong, Sungbum, Sun, Chenghan, Wang, Xinwei, Wu, Yue, & Claussen, Jonathan C. Inkjet Printing of Single-Crystalline Bi 2 Te 3 Thermoelectric Nanowire Networks. United States. doi:10.1002/aelm.201600524.
Chen, Bolin, Das, Suprem R., Zheng, Wei, Zhu, Bowen, Xu, Biao, Hong, Sungbum, Sun, Chenghan, Wang, Xinwei, Wu, Yue, and Claussen, Jonathan C. Fri . "Inkjet Printing of Single-Crystalline Bi 2 Te 3 Thermoelectric Nanowire Networks". United States. doi:10.1002/aelm.201600524.
@article{osti_1401521,
title = {Inkjet Printing of Single-Crystalline Bi 2 Te 3 Thermoelectric Nanowire Networks},
author = {Chen, Bolin and Das, Suprem R. and Zheng, Wei and Zhu, Bowen and Xu, Biao and Hong, Sungbum and Sun, Chenghan and Wang, Xinwei and Wu, Yue and Claussen, Jonathan C.},
abstractNote = {},
doi = {10.1002/aelm.201600524},
journal = {Advanced Electronic Materials},
number = 4,
volume = 3,
place = {United States},
year = {Fri Mar 17 00:00:00 EDT 2017},
month = {Fri Mar 17 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1002/aelm.201600524

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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  • Temparature dependence of Seebeck coefficients S, electrical conductivity, heat conductivity k and dimensionless thermoelectric figure of merit ZT of p-Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and n-Bi{sub 2}Se{sub 3}-doped by Fe or Cr were carried out in the temperature interval 7150 K. - Graphical abstract: Temparature dependence of Seebeck coefficients S, electrical conductivity {sigma}, heat conductivity k and dimensionless thermoelectric figure of merit ZT of p-Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and n-Bi{sub 2}Se{sub 3} doped by Fe or Cr were measured in the temperature interval 7150 K up to ZT=0.4 as shown in figure. Highlights: Black-Right-Pointing-Pointer Fe and Crmore » act as donors in Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3.} Black-Right-Pointing-Pointer The Seebeck coefficient increases in p-Bi{sub 2-x}Fe{sub x}Te{sub 3} and Sb{sub 2-x}Cr{sub x}Te{sub 3}. Black-Right-Pointing-Pointer Dimensionless figure of merit ZT increased up to 0.4 in Cr-doped Sb{sub 2}Te{sub 3} at T=300 K.« less
  • Bi{sub 2}Te{sub 3}-Sb{sub 2}Te{sub 3}-Sb{sub 2}Se{sub 3} alloys with Sb{sub 2}Te{sub 3} and Sb{sub 2}Se{sub 3} contents up to 10 mol%, e.g., the 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloy, are among the best n-type thermoelectric materials for Peltier coolers used near room temperature. In this work, the electrical and thermoelectric properties of Sbl{sub 3}doped 90% Bi{sub 2}Te{sub 3}-5% Sb{sub 2}Te{sub 3}-5% Sb{sub 2}Se{sub 3} alloys were characterized at temperatures ranging from 80K to 600K. The temperature dependencies of the Hall coefficient, carrier mobility, Seebeck coefficient and thermal conductivity were measured, and the scattering parameter andmore » bandgap energy were determined.« less
  • The authors investigate the effect of heat treatment on the interface of single crystals of solid solutions of the systems Bi/sub 2/Te/sub 3/-Bi/sub 2/Se/sub 3/ and Bi/sub 2/Te/sub 3/-Sb/sub 2/Te/sub 3/ and the alloys Bi-Sn and Bi-Sb. Two methods were considered. In the first method, the surfaces of the samples were mechanically ground with an abrasive paste before treatment, and in the second method they were not ground. Methods of treatment were chemical etching, electrochemical etching, rubbing of the surfaces with cotton balls, and wetting with electrochemical-etching solutions. Dependences of the junction-contact resistance of surfaces of crystals of solid solutionsmore » of the systems investigated here on the heat treatment time and also on the method of preliminary treatment before soldering with alloy and on the soldering method after electrochemical etching are shown.« less
  • The dependence of the electrical conductivity, thermoelectric power and figure of merit on the grain size in cold pressed Bi{sub 1.8}Sb{sub 0.2{minus}{ital x}}In{sub {ital x}}Te{sub 2.85}Se{sub 0.15}, where {ital x}=0, 0.01, 0.02 was measured. The influence of the indium content and grain size on the thermoelectric properties is discussed. In this materials the changes of the free carrier concentration are due to the interaction between antisite-defects and vacancies during the sintering. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
  • In the interval 100-300/degree/K, the authors have investigated the temperature dependences of the thermal emf coefficient and the electrical conductivity of lead-doped single crystals of solid solutions of the system Sb/sub 1.5/Bi/sub 0.5/Te/sub 3/-Bi/sub 2/Se/sub 3/. They have shown that doping with lead does not affect the character of these curves, the slopes of which are determined mainly by the degree of deviation of the composition of the solid solution from stoichiometric.