Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same
Patent Application
·
OSTI ID:140146
An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises ytterbium doped apatite (Yb:Ca{sub 5}(PO{sub 4}){sub 3}F) or Yb:FAP, or ytterbium doped crystals structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7792792
- Application Number:
- ON: DE94003034; PAN: 7-792,792
- OSTI ID:
- 140146
- Resource Relation:
- Other Information: PBD: 1991
- Country of Publication:
- United States
- Language:
- English
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