Patterned growth of p-type MoS2 atomic layers using sol-gel as precursor

Zheng, Wei; Lin, Junhao; Feng, Wei; Xiao, Kai; Qiu, Yunfeng; Chen, XiaoShuang; Liu, Guangbo; Cao, Wenwu; Pantelides, Sokrates T.; Zhou, Wu; Hu, PingAn

doi:10.1002/adfm.201602494

Title: Patterned growth of p-type MoS₂ atomic layers using sol-gel as precursor

Journal Article · Tue Jul 19 00:00:00 EDT 2016 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201602494· OSTI ID:1329138

Zheng, Wei ^[1]; Lin, Junhao ^[2]; Feng, Wei ^[1]; Xiao, Kai ^[3]; Qiu, Yunfeng ^[1]; Chen, XiaoShuang ^[1]; Liu, Guangbo ^[1]; Cao, Wenwu ^[3]; Pantelides, Sokrates T. ^[2]; Zhou, Wu ^[3]; Hu, PingAn ^[1]

Harbin Institute of Technology, Harbin (People's Republic of China)
Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2D layered MoS₂ has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS₂ atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS₂ atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS₂ layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS₂ film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS₂ atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS₂ atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Lastly, an atomically thin p–n junction is fabricated by the as-prepared MoS₂, which shows strong rectifying behavior.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725; DE‐FG02‐09ER46554; FG02-09ER46554

OSTI ID:: 1329138

Alternate ID(s):: OSTI ID: 1401451; OSTI ID: 1597789

Journal Information:: Advanced Functional Materials, Vol. 26, Issue 35; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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Tuning electrochemical catalytic activity of defective 2D terrace MoSe ₂ heterogeneous catalyst via cobalt doping Chen, Xiaoshuang; Qiu, Yunfeng; Liu, Guangbo Journal of Materials Chemistry A, Vol. 5, Issue 22 https://doi.org/10.1039/c7ta02327h	journal	January 2017
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