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Title: Hidden Interface Driven Exchange Coupling in Oxide Heterostructures

Journal Article · · Advanced Materials
ORCiD logo [1];  [2];  [3]; ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [4]; ORCiD logo [1];  [5]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; West Virginia Univ., Morgantown, WV (United States). Dept. of Physics and Astronomy
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics and Astronomy
  4. Univ. of Cambridge (United Kingdom). Dept. of Materials Science
  5. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies; Univ. of Buffalo, NY (United States). Dept. of Materials Design and Innovation

We enabled a variety of emergent phenomena by using interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. But, the role of such an interlayerin controlling functionalities is not fully explored. We also report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. These results shed new light on using oxide interfaces to design functional spintronic devices.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
Grant/Contract Number:
AC52-06NA25396; AC05-00OR22725; DE‐AC52‐06NA25396
OSTI ID:
1357117
Alternate ID(s):
OSTI ID: 1361327; OSTI ID: 1401298
Report Number(s):
LA-UR-16-23418
Journal Information:
Advanced Materials, Vol. 29, Issue 26; ISSN 0935-9648
Publisher:
WileyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 37 works
Citation information provided by
Web of Science

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Cited By (8)

Spin Frustration Drives Exchange Bias Sign Crossover in CoFe 2 O 4 –Cr 2 O 3 Nanocomposites journal July 2019
Atomic-scale determination of spontaneous magnetic reversal in oxide heterostructures journal May 2019
Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface journal October 2018
Oxygen deficiency and cooling field driven vertical hysteretic shift in epitaxial SrRuO 3 /SrTiO 3 heterostructures journal October 2017
Semicoherent oxide heterointerfaces: Structure, properties, and implications journal October 2019
Influence of atomic roughness at the uncompensated Fe/CoO(111) interface on the exchange-bias effect journal January 2020
Influence of atomic roughness at the uncompensated Fe/CoO(111) interface on the exchange-bias effect text January 2020
Influence of Atomic Roughness at The Uncompensated Fe/CoO (111) Interface on Exchange Bias Effect text January 2020