Bonding charge density from atomic perturbations

Wang, Yi; Wang, William Yi; Chen, Long‐Qing; Liu, Zi‐Kui

doi:10.1002/jcc.23880

Title: Bonding charge density from atomic perturbations

Journal Article · Mon Mar 16 00:00:00 EDT 2015 · Journal of Computational Chemistry

DOI:https://doi.org/10.1002/jcc.23880· OSTI ID:1401129

Wang, Yi ^[1]; Wang, William Yi ^[1]; Chen, Long‐Qing ^[1]; Liu, Zi‐Kui ^[1]

Department of Materials Science and Engineering The Pennsylvania State University University Park Pennsylvania 16802‐5006

Charge transfer among individual atoms is the key concept in modern electronic theory of chemical bonding. In this work, we present a first‐principles approach to calculating the charge transfer. Based on the effects of perturbations of an individual atom or a group of atoms on the electron charge density, we determine unambiguously the amount of electron charge associated with a particular atom or a group of atoms. We computed the topological electron loss versus gain using ethylene, graphene, MgO, and SrTiO ₃ as examples. Our results verify the nature of chemical bonds in these materials at the atomic level. © 2015 Wiley Periodicals, Inc.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐FC26‐98FT40343

OSTI ID:: 1401129

Journal Information:: Journal of Computational Chemistry, Journal Name: Journal of Computational Chemistry Vol. 36 Journal Issue: 13; ISSN 0192-8651

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 18 works

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References (22)

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