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Title: High-Performance Near-IR Photodetector Using Low-Bandgap MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 Perovskite

Authors:
 [1];  [2];  [3];  [1];  [1];  [1];  [3];  [4]
  1. Department of Materials Science and Engineering, University of Washington, Seattle WA 98195-2120 USA
  2. Department of Chemical Engineering, National Taiwan University
  3. Department of Electrical Engineering, University of Washington, Seattle WA 98195-2120 USA
  4. Department of Materials Science and Engineering, University of Washington, Seattle WA 98195-2120 USA, Department of Biology and Chemistry, City University of Hong Kong, Kowloon Hong Kong
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1400855
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Advanced Functional Materials
Additional Journal Information:
Journal Volume: 27; Journal Issue: 28; Related Information: CHORUS Timestamp: 2017-10-20 15:51:08; Journal ID: ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., and Jen, Alex K. -Y. High-Performance Near-IR Photodetector Using Low-Bandgap MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 Perovskite. Germany: N. p., 2017. Web. doi:10.1002/adfm.201701053.
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., & Jen, Alex K. -Y. High-Performance Near-IR Photodetector Using Low-Bandgap MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 Perovskite. Germany. doi:10.1002/adfm.201701053.
Xu, Xiaobao, Chueh, Chu-Chen, Jing, Peifeng, Yang, Zhibin, Shi, Xueliang, Zhao, Ting, Lin, Lih Y., and Jen, Alex K. -Y. Tue . "High-Performance Near-IR Photodetector Using Low-Bandgap MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 Perovskite". Germany. doi:10.1002/adfm.201701053.
@article{osti_1400855,
title = {High-Performance Near-IR Photodetector Using Low-Bandgap MA 0.5 FA 0.5 Pb 0.5 Sn 0.5 I 3 Perovskite},
author = {Xu, Xiaobao and Chueh, Chu-Chen and Jing, Peifeng and Yang, Zhibin and Shi, Xueliang and Zhao, Ting and Lin, Lih Y. and Jen, Alex K. -Y.},
abstractNote = {},
doi = {10.1002/adfm.201701053},
journal = {Advanced Functional Materials},
number = 28,
volume = 27,
place = {Germany},
year = {Tue May 16 00:00:00 EDT 2017},
month = {Tue May 16 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1002/adfm.201701053

Citation Metrics:
Cited by: 6works
Citation information provided by
Web of Science

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  • In this study, different from the commonly explored strategy of incorporating a smaller cation, MA + and Cs + into FAPbI 3 lattice to improve efficiency and stability, it is revealed that the introduction of phenylethylammonium iodide (PEAI) into FAPbI 3 perovksite to form mixed cation FA xPEA 1–xPbI 3 can effectively enhance both phase and ambient stability of FAPbI 3 as well as the resulting performance of the derived devices. From our experimental and theoretical calculation results, it is proposed that the larger PEA cation is capable of assembling on both the lattice surface and grain boundaries to formmore » quais-3D perovskite structures. The surrounding of PEA + ions at the crystal grain boundaries not only can serve as molecular locks to tighten FAPbI 3 domains but also passivate the surface defects to improve both phase and moisture stablity. Consequently, a high-performance (PCE:17.7%) and ambient stable FAPbI 3 solar cell could be developed« less
  • We report the synthesis of CH{sub 3}NH{sub 3}Pb(Br{sub 3−y}X{sub y}) (X=Cl and I) single crystals via a stepwise temperature control approach. High-quality CH{sub 3}NH{sub 3}Pb(Br{sub 3−y}X{sub y}) crystals with a tunable bandgap from 1.92 eV to 2.53 eV have been prepared successfully in this way. And further experiments revealed the influence of halogen content and preparation temperature on the structural and optical properties of these crystals. It is observed that chlorine can lower the critical nucleation energy, which results in crystallizing at lower temperature with the chlorine content increasing, while the nucleation energy increases slowly with increasing iodine content. Moreover,more » in contrast to Frank–van der Merwe growth with low heating rate, high heating rate leads to a mass of small size single crystals and Stranski-Krastanov growth. The single crystals with tunable band gap and impressive characteristics enable us to fabricate high performance photodetectors for different wavelengths.« less
  • We have synthesized a new Bi{sub 0.5}Pb{sub 0.}5CrO{sub 3} perovskite phase by means of a high pressure reaction at 70 kbar and 1000 °C. The distorted orthorhombic perovskite structure can be indexed in the space group Pnma with lattice parameters a=5.4768 (1) Å, b=7.7450 (2) Å, and c=5.4574 (1) Å at room temperature, but undergoes a structural phase transition and enters into a P2{sub 1}/m monoclinic distorted perovskite phase below 150 K with a=5.4173 (2), b=7.7286 (4) and c=5.4930 (3). The structural transition is coincident with the onset of magnetic interactions. At lower temperatures a weak ferromagnetic structure is evidentmore » related to antiferromagnetic Cr-spin canting and a spin-glass transition is observed at ≈40 K. The semiconducting-type electrical resistivity is relatively low, associated with Cr{sup 3+}/Cr{sup 4+} electron hopping, and shows considerable magneto-resistance (up to 15%). Due to the low resistivity the dielectric permittivity ε{sub r} could be determined only below T<80 K to be ≈300 and did not show any strong temperature-dependence. Ferroelectricity was not detected in the T-range investigated and no magnetocapacitance effects were observed. - Graphical abstract: A new Bi{sub 0.5}Pb{sub 0.}5CrO{sub 3} perovskite phase has been synthesized under high pressure (70 kbar) and high temperature (1000 °C) conditions. The room temperature structure is orthorhombic and can be indexed in the space group Pnma but below 150 K undergoes a structural phase transition and enters into a P2{sub 1}/m monoclinic distorted perovskite phase. The structural transition is coincident with the onset of magnetic interactions. Mott variable-range hopping charge transport and magnetoresistance effects are evident. - Highlights: • A new Bi{sub 0.5}Pb{sub 0.}5CrO{sub 3} perovskite has been synthesized under HP/HT conditions. • An orthorhombic-to monoclinic phase transition takes place at 150 K. • The structural transition is coincident with the onset of magnetic interactions. • Mott variable-range hopping charge transport and magnetoresistance are evident.« less
  • Fully and partly disordered superionic conductors in the PbF[sub 2]/SnF[sub 2] system have been studied using X-ray powder diffraction, [sup 119]Sn Moessbauer spectroscopy, and Pb-L[sub 3] and Sn-K EXAFS (extended X-ray absorption fine structure). X-ray diffraction is seriously limited because of the large degree of disorder at the metal site. The solid solution Pb[sub 1[minus]x]Sn[sub x]F[sub 2] (x = 0-0.30) is fully disordered as is the stoichiometric compound PbSn[sub 4]F[sub 10] (x = 0.80). On the other hand, some degree of ordering occurs in Pb[sub 0.6]Sn[sub 0.4]F[sub 2] (x = 0.40) and [beta]-PbSnF[sub 4] (x = 0.50). [sup 119]Sn Moessbauermore » spectra show that the tin(II) lone pair is stereoactive in these materials. Therefore, the tin environment is highly distorted and its nonbonded electron pair is not a charge carrier in the conduction mechanism. The Sn-K and Pb-L[sub 3] EXAFS spectra indicate average first shell distances of R[sub Sn-F] = 2.12(1) [angstrom] and R[sub Pb-F] = 2.55(1) [angstrom]. There is a clear second shell Pb-Pb signal in the Pb-L[sub 3] EXAFS but no higher shell signal in the Sn-K EXAFS, indicating a higher degree of disorder and a lower rigidity of next-neighbor fluorine shells around Sn than around Pb. The results are discussed in relation to previous studies of ordered MSnF[sub 4] fluoride ionic conductors and to proposed mechanisms for ionic conduction in these superionic materials. 33 refs., 9 figs., 4 tabs.« less
  • Perovskite-type CH{sub 3}NH{sub 3}PbI{sub 3}-based photovoltaic devices were fabricated and characterized. Doping effects of thallium (Tl), indium (In), or germanium (Ge) element on the photovoltaic properties and surface structures of the perovskite phase were investigated. The open circuit voltage increased by Ge addition, and fill factors were improved by adding a small amount of Ge, Tl or In. In addition, the wavelength range of incident photon conversion efficiencies was expanded by the Tl addition.