Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems

Wendler, Elke; Sobolev, Nikolai A.; Redondo-Cubero, Andrés; Lorenz, Katharina

doi:10.1002/pssb.201600405

Title: Ion-beam induced effects in multi-layered semiconductor systems: Ion-beam induced effects in multi-layered semiconductor systems

Journal Article · Fri Jul 15 00:00:00 EDT 2016 · Physica Status Solidi B. Basic Solid State Physics

DOI:https://doi.org/10.1002/pssb.201600405· OSTI ID:1400771

Wendler, Elke ^[1]; Sobolev, Nikolai A. ^[2]; Redondo-Cubero, Andrés ^[3]; Lorenz, Katharina ^[4]

Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1 07743 Jena Germany
Departamento de Física, i3N, Universidade de Aveiro, 3810-193 Aveiro Portugal
Departamento de Física Aplicada y Centro de Microanálisis of Materiales, Universidad Autónoma de Madrid, 28049 Madrid Spain
IPFN, Instituto Superior Técnico, Universidade de Lisboa, Estrada National, 2695-066 Bobadela LRS Portugal

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Sponsoring Organization:: USDOE Office of Nuclear Energy (NE), Fuel Cycle Technologies (NE-5)

Grant/Contract Number:: UID/CTM/50025/2013; JCI-2012-14509

OSTI ID:: 1400771

Journal Information:: Physica Status Solidi B. Basic Solid State Physics, Journal Name: Physica Status Solidi B. Basic Solid State Physics Vol. 253 Journal Issue: 11; ISSN 0370-1972

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 3 works

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References (24)

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Comparison of low- and room-temperature damage formation in Ar ion implanted GaN and ZnO Wendler, E.; Wesch, W.; Azarov, A. Yu. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 307 https://doi.org/10.1016/j.nimb.2013.01.020	journal	July 2013
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