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Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [2];  [1]
  1. Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1400423
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 16; Related Information: CHORUS Timestamp: 2018-02-14 23:34:21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes. United States: N. p., 2017. Web. doi:10.1063/1.4989599.
Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, & Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes. United States. doi:10.1063/1.4989599.
Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Mon . "Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes". United States. doi:10.1063/1.4989599.
@article{osti_1400423,
title = {Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes},
author = {Zhang, Yuhao and Sun, Min and Piedra, Daniel and Hennig, Jonas and Dadgar, Armin and Palacios, Tomás},
abstractNote = {},
doi = {10.1063/1.4989599},
journal = {Applied Physics Letters},
number = 16,
volume = 111,
place = {United States},
year = {Mon Oct 16 00:00:00 EDT 2017},
month = {Mon Oct 16 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 20, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

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