skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Authors:
ORCiD logo [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [2];  [1]
  1. Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  2. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1400423
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 16; Related Information: CHORUS Timestamp: 2018-02-14 23:34:21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes. United States: N. p., 2017. Web. doi:10.1063/1.4989599.
Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, & Palacios, Tomás. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes. United States. doi:10.1063/1.4989599.
Zhang, Yuhao, Sun, Min, Piedra, Daniel, Hennig, Jonas, Dadgar, Armin, and Palacios, Tomás. 2017. "Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes". United States. doi:10.1063/1.4989599.
@article{osti_1400423,
title = {Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes},
author = {Zhang, Yuhao and Sun, Min and Piedra, Daniel and Hennig, Jonas and Dadgar, Armin and Palacios, Tomás},
abstractNote = {},
doi = {10.1063/1.4989599},
journal = {Applied Physics Letters},
number = 16,
volume = 111,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 20, 2018
Publisher's Accepted Manuscript

Citation Metrics:
Cited by: 1work
Citation information provided by
Web of Science

Save / Share:
  • We demonstrate experimentally that the critical current in superconducting NbTiN wires is dependent on their geometrical shape, due to current-crowding effects. Geometric patterns such as 90{degrees} corners and sudden expansions of wire width are shown to result in the reduction of critical currents. The results are relevant for single-photon detectors as well as parametric amplifiers.
  • We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
  • Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (10 4 - 10 5 cm -2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 10 15 cm -3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p)more » layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.« less
  • Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 10 13 cm -2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaNmore » P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less