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Title: Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS 2

Abstract

Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS 2 between a transistor and a junction state. In the presence of a domain wall, MoS 2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height Φ eff Β varies from 0.38 eV to 0.57 eV and is tunabe by a SiO 2 global back-gate, while the tuning range of Φ eff Β the barrier height depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

Authors:
 [1];  [1];  [2];  [1]; ORCiD logo [1]
  1. Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
Publication Date:
Research Org.:
Univ. of Nebraska-Lincoln, Lincoln, NE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1400412
Alternate Identifier(s):
OSTI ID: 1372585
Grant/Contract Number:  
SC0016153
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 118; Journal Issue: 23; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; MoS2; P(VDF-TrFE); ferroelectric field effect; Schottky junction; scanning probe microscopy; ferroelectric domain

Citation Formats

Xiao, Zhiyong, Song, Jingfeng, Ferry, David K., Ducharme, Stephen, and Hong, Xia. Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2. United States: N. p., 2017. Web. doi:10.1103/PhysRevLett.118.236801.
Xiao, Zhiyong, Song, Jingfeng, Ferry, David K., Ducharme, Stephen, & Hong, Xia. Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2. United States. doi:10.1103/PhysRevLett.118.236801.
Xiao, Zhiyong, Song, Jingfeng, Ferry, David K., Ducharme, Stephen, and Hong, Xia. Thu . "Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2". United States. doi:10.1103/PhysRevLett.118.236801. https://www.osti.gov/servlets/purl/1400412.
@article{osti_1400412,
title = {Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS2},
author = {Xiao, Zhiyong and Song, Jingfeng and Ferry, David K. and Ducharme, Stephen and Hong, Xia},
abstractNote = {Here, we exploit scanning probe controlled domain patterning in a ferroelectric top-layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V that is well described by the thermionic emission model. The induced Schottky barrier height ΦeffΒ varies from 0.38 eV to 0.57 eV and is tunabe by a SiO2 global back-gate, while the tuning range of ΦeffΒ the barrier height depends sensitively on the conduction band tail trapping states. Our work points to a new route to achieve programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.},
doi = {10.1103/PhysRevLett.118.236801},
journal = {Physical Review Letters},
number = 23,
volume = 118,
place = {United States},
year = {Thu Jun 08 00:00:00 EDT 2017},
month = {Thu Jun 08 00:00:00 EDT 2017}
}

Journal Article:
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Cited by: 5 works
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