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Title: Determination of spin relaxation times in heavy metals via second-harmonic spin injection magnetoresistance

Journal Article · · Physical Review B
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [3];  [3]
  1. Chinese Academy of Sciences (CAS), Beijing (China); China and Univ. of Chinese Academy of Sciences, Beijing (China)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Shanghai Univ., Shanghai (China)

In tunnel junctions between ferromagnets and heavy elements with strong spin orbit coupling the magnetoresistance is usually dominated by tunneling anisotropic magnetoresistance (TAMR). This makes conventional DC spin injection techniques impractical for determining the spin relaxation time τs. Here, we show that this obstacle for measurements of τs can be overcome by second-harmonic spin-injection magnetoresistance (SIMR). In the second-harmonic signal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-induced SIMR as a powerful tool to directly determine τs. Using this approach we determined the spin relaxation time of Pt and Ta and their temperature dependences. In conclusion, the spin relaxation in Pt seems to be governed by the Elliott-Yafet mechanism due to a constant resistivity × spin relaxation time product over a wide temperature range.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Natural Science Foundation of China (NSFC); Chinese Academy of Sciences (CAS), Strategic Priority Research Program; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Ministry of Science and Technology of the Republic of China (MOST); USDOE
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1480265
Alternate ID(s):
OSTI ID: 1400330
Journal Information:
Physical Review B, Vol. 96, Issue 13; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 12 works
Citation information provided by
Web of Science

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Room temperature spin injection into SiC via Schottky barrier journal November 2018

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