In-situ Synchrotron X-ray Studies of the Microstructure and Stability of In2O3 Epitaxial Films
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
- Northern Illinois Univ., DeKalb, IL (United States). Dept. of Physics
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)
- Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
We report on the synthesis, stability, and local structure of In2O3 thin films grown via rf-magnetron sputtering and characterized by in-situ x-ray scattering and focused x-ray nanodiffraction. We find that In2O3 deposited onto (0 0 1)-oriented single crystal yttria-stabilized zirconia substrates adopts a Stranski-Krastanov growth mode at a temperature of 850 degrees C, resulting in epitaxial, truncated square pyramids with (1 1 1) side walls. We find that at this temperature, the pyramids evaporate unless they are stabilized by a low flux of In2O3 from the magnetron source. We also find that the internal lattice structure of one such pyramid is made up of differently strained volumes, revealing local structural heterogeneity that may impact the properties of In2O3 nanostructures and films.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences and Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
- Grant/Contract Number:
- SC0012704; AC02-06CH11357
- OSTI ID:
- 1413931
- Alternate ID(s):
- OSTI ID: 1400329; OSTI ID: 1411041
- Report Number(s):
- BNL-114467-2017-JA; TRN: US1800592
- Journal Information:
- Applied Physics Letters, Vol. 111, Issue 16; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Degradation Mechanism of Vanadium Oxide Films When Grown on Y‐Stabilized ZrO 2 Above 500 °C
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journal | October 2019 |
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