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Title: Pressure-Induced Charge-Order Melting and Reentrant Charge Carrier Localization in the Mixed-Valent Pb 3Rh 7O 15

Abstract

Here, the mixed-valent Pb$${}_{3}$$Rh $${}_{7}$$O$${}_{15}$$ undergoes a Verwey-type transition at $${T}_{{\rm{v}}}\approx 180$$ K, below which the development of Rh$${}^{3+}$$ /Rh$${}^{4+}$$ charge order induces an abrupt conductor-to-insulator transition in resistivity. Here we investigate the effect of pressure on the Verwey-type transition of Pb$${}_{3}$$Rh$${}_{7}$$O$${}_{15}$$ by measuring its electrical resistivity under hydrostatic pressures up to 8 GPa with a cubic anvil cell apparatus. We find that the application of high pressure can suppress the Verwey-type transition around 3 GPa, above which a metallic state is realized at temperatures below ~70 K, suggesting the melting of charge order by pressure. Interestingly, the low-temperature metallic region shrinks gradually upon further increasing pressure and disappears completely at P > 7 GPa, which indicates that the charge carriers in Pb$${}_{3}$$Rh$${}_{7}$$O$${}_{15}$$ undergo a reentrant localization under higher pressures. We have constructed a temperature-pressure phase diagram for Pb$${}_{3}$$Rh$${}_{7}$$O$${}_{15}$$ and compared to that of Fe$${}_{3}$$O$${}_{4}$$, showing an archetype Verwey transition.

Authors:
 [1];  [1];  [1];  [2];  [2];  [3];  [4]; ORCiD logo [5];  [2]
  1. Beijing Institute of Petrochemical Technology, Beijing (China)
  2. Chinese Academy of Sciences (CAS), Beijing (China); Univ. of Chinese Academy of Sciences, Beijing (China)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  4. Univ. of Tokyo, Chiba (Japan)
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1399944
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Chinese Physics Letters
Additional Journal Information:
Journal Volume: 34; Journal Issue: 8; Journal ID: ISSN 0256-307X
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Li, Yan, Sun, Zhao, Cai, Jia -Wei, Sun, Jian -Ping, Wang, Bo -Sen, Zhao, Zhi -Ying, Uwatoko, Y., Yan, Jia -Qiang, and Cheng, Jin -Guang. Pressure-Induced Charge-Order Melting and Reentrant Charge Carrier Localization in the Mixed-Valent Pb3Rh7O15. United States: N. p., 2017. Web. doi:10.1088/0256-307X/34/8/087201.
Li, Yan, Sun, Zhao, Cai, Jia -Wei, Sun, Jian -Ping, Wang, Bo -Sen, Zhao, Zhi -Ying, Uwatoko, Y., Yan, Jia -Qiang, & Cheng, Jin -Guang. Pressure-Induced Charge-Order Melting and Reentrant Charge Carrier Localization in the Mixed-Valent Pb3Rh7O15. United States. doi:10.1088/0256-307X/34/8/087201.
Li, Yan, Sun, Zhao, Cai, Jia -Wei, Sun, Jian -Ping, Wang, Bo -Sen, Zhao, Zhi -Ying, Uwatoko, Y., Yan, Jia -Qiang, and Cheng, Jin -Guang. 2017. "Pressure-Induced Charge-Order Melting and Reentrant Charge Carrier Localization in the Mixed-Valent Pb3Rh7O15". United States. doi:10.1088/0256-307X/34/8/087201.
@article{osti_1399944,
title = {Pressure-Induced Charge-Order Melting and Reentrant Charge Carrier Localization in the Mixed-Valent Pb3Rh7O15},
author = {Li, Yan and Sun, Zhao and Cai, Jia -Wei and Sun, Jian -Ping and Wang, Bo -Sen and Zhao, Zhi -Ying and Uwatoko, Y. and Yan, Jia -Qiang and Cheng, Jin -Guang},
abstractNote = {Here, the mixed-valent Pb${}_{3}$Rh ${}_{7}$O${}_{15}$ undergoes a Verwey-type transition at ${T}_{{\rm{v}}}\approx 180$ K, below which the development of Rh${}^{3+}$ /Rh${}^{4+}$ charge order induces an abrupt conductor-to-insulator transition in resistivity. Here we investigate the effect of pressure on the Verwey-type transition of Pb${}_{3}$Rh${}_{7}$O${}_{15}$ by measuring its electrical resistivity under hydrostatic pressures up to 8 GPa with a cubic anvil cell apparatus. We find that the application of high pressure can suppress the Verwey-type transition around 3 GPa, above which a metallic state is realized at temperatures below ~70 K, suggesting the melting of charge order by pressure. Interestingly, the low-temperature metallic region shrinks gradually upon further increasing pressure and disappears completely at P > 7 GPa, which indicates that the charge carriers in Pb${}_{3}$Rh${}_{7}$O${}_{15}$ undergo a reentrant localization under higher pressures. We have constructed a temperature-pressure phase diagram for Pb${}_{3}$Rh${}_{7}$O${}_{15}$ and compared to that of Fe${}_{3}$O${}_{4}$, showing an archetype Verwey transition.},
doi = {10.1088/0256-307X/34/8/087201},
journal = {Chinese Physics Letters},
number = 8,
volume = 34,
place = {United States},
year = 2017,
month = 7
}

Journal Article:
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  • We have investigated the relation between defect structure and charge order melting in thin films of epitaxial Pr{sub 0.5}Ca{sub 0.5}MnO{sub 3} (PCMO), grown under strain on SrTiO{sub 3}. We compared the behavior of an 80 nm film grown in one deposition step at 840 degree sign C with the behavior of a film grown in two steps. In the two-step case, a thin PCMO layer of 10 nm was deposited at 120 degree sign C, followed by 70 nm deposited at 840 degree sign C. The increase of the growth temperature leads to complete crystallization of the first layer andmore » the lattice constants of the two-step grown film indicate that tensile strain is still present. On the other hand, a magnetic field of only 5 T is required to melt the charge-order state in the two-step grown film, which is a much lower than the value for the normally grown film. This appears to be connected to a larger amount of threading dislocations present in the first (recrystallized) layer.« less
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