Interlayer bond polarizability model for stacking-dependent low-frequency Raman scattering in layered materials
- Rensselaer Polytechnic Inst., Troy, NY (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Rensselaer Polytechnic Inst., Troy, NY (United States)
A simple model is developed to reveal the stacking dependence of Raman intensities of interlayer vibrations in 2D materials.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1399929
- Journal Information:
- Nanoscale, Vol. 9; ISSN 2040-3364
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 31 works
Citation information provided by
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