p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

doi:https://doi.org/10.1103/PhysRevApplied.8.024027

Title: $p - n$ Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

Authors:

Kurchak, Anatolii I. ^[1]; Eliseev, Eugene A. ^[1]; Kalinin, Sergei V. ^[2]; Strikha, Maksym V. ^[3]; Morozovska, Anna N. ^[1]

National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Taras Shevchenko Kyiv National Univ., Kyiv (Ukraine)

Publication Date:: 2017-08-30

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1399918

Alternate Identifier(s):: OSTI ID: 1377695

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Physical Review Applied

Additional Journal Information:: Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 2331-7019

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., and Morozovska, Anna N. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate.  United States: N. p., 2017. 
        Web.  doi:10.1103/PhysRevApplied.8.024027.

Copy to clipboard


                    Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., & Morozovska, Anna N. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate.  United States.  https://doi.org/10.1103/PhysRevApplied.8.024027

Copy to clipboard


                    Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., and Morozovska, Anna N. Wed .  
        "p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate".  United States.  https://doi.org/10.1103/PhysRevApplied.8.024027.  https://www.osti.gov/servlets/purl/1399918.

Copy to clipboard


                    
@article{osti_1399918,

  title        = {p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate},

  author       = {Kurchak, Anatolii I. and Eliseev, Eugene A. and Kalinin, Sergei V. and Strikha, Maksym V. and Morozovska, Anna N.},

  abstractNote = {},

  doi          = {10.1103/PhysRevApplied.8.024027},

  url          = {https://www.osti.gov/biblio/1399918},
  journal      = {Physical Review Applied},

  issn         = {2331-7019},

  number       = 2,

  volume       = 8,

  place        = {United States},

  year         = {2017},

  month        = {8}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1103/PhysRevApplied.8.024027

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 7 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric
journal, June 2015

Morozovska, Anna N.; Pusenkova, Anastasiia S.; Varenyk, Oleksandr V.
Physical Review B, Vol. 91, Issue 23
https://doi.org/10.1103/PhysRevB.91.235312

Ferroionic states in ferroelectric thin films
journal, May 2017

Morozovska, Anna N.; Eliseev, Eugene A.; Morozovsky, Nicholas V.
Physical Review B, Vol. 95, Issue 19
https://doi.org/10.1103/PhysRevB.95.195413

Single gate p-n junctions in graphene-ferroelectric devices
journal, May 2016

Hinnefeld, J. Henry; Xu, Ruijuan; Rogers, Steven
Applied Physics Letters, Vol. 108, Issue 20
https://doi.org/10.1063/1.4950975

Conductivity of Graphene on Ferroelectric PVDF-TrFE [Провідність графену на сегнетоелектрику PVDF-TrFE]
journal, June 2014

Kurchak, A. I.; Strikha, M. V.
Ukrainian Journal of Physics, Vol. 59, Issue 6
https://doi.org/10.15407/ujpe59.06.0622

Ferroelectric domain triggers the charge modulation in semiconductors (invited)
journal, August 2014

Morozovska, Anna N.; Eliseev, Eugene A.; Ievlev, Anton V.
Journal of Applied Physics, Vol. 116, Issue 6
https://doi.org/10.1063/1.4891310

Phenomenological model of a 90° domain wall in $Ba Ti O_{3}$ -type ferroelectrics
journal, September 2006

Hlinka, J.; Márton, P.
Physical Review B, Vol. 74, Issue 10
https://doi.org/10.1103/PhysRevB.74.104104

Colloquium : Andreev reflection and Klein tunneling in graphene
journal, October 2008

Beenakker, C. W. J.
Reviews of Modern Physics, Vol. 80, Issue 4
https://doi.org/10.1103/RevModPhys.80.1337

Selective transmission of Dirac electrons and ballistic magnetoresistance of $n − p$ junctions in graphene
journal, July 2006

Cheianov, Vadim V.; Fal’ko, Vladimir I.
Physical Review B, Vol. 74, Issue 4
https://doi.org/10.1103/PhysRevB.74.041403

Nonlinear Screening and Ballistic Transport in a Graphene $p − n$ Junction
journal, March 2008

Zhang, L. M.; Fogler, M. M.
Physical Review Letters, Vol. 100, Issue 11
https://doi.org/10.1103/PhysRevLett.100.116804

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene
journal, August 2007

Williams, J. R.; DiCarlo, L.; Marcus, C. M.
Science, Vol. 317, Issue 5838
https://doi.org/10.1126/science.1144657

Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall
journal, June 2016

Morozovska, Anna N.; Eliseev, Eugene A.; Strikha, Maksym V.
Applied Physics Letters, Vol. 108, Issue 23
https://doi.org/10.1063/1.4953226

Surface effects on phase transitions in ferroelectrics and dipolar magnets
journal, August 1979

Kretschmer, R.; Binder, K.
Physical Review B, Vol. 20, Issue 3
https://doi.org/10.1103/PhysRevB.20.1065

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004

Novoselov, K. S.
Science, Vol. 306, Issue 5696, p. 666-669
https://doi.org/10.1126/science.1102896

Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
journal, August 2014

Yusuf, M. Humed; Nielsen, Bent; Dawber, M.
Nano Letters, Vol. 14, Issue 9
https://doi.org/10.1021/nl502669v

General approach for the description of size effects in ferroelectric nanosystems
journal, October 2009

Eliseev, Eugene A.; Morozovska, Anna N.
Journal of Materials Science, Vol. 44, Issue 19
https://doi.org/10.1007/s10853-009-3473-0

Graphene: Status and Prospects
journal, June 2009

Geim, A. K.
Science, Vol. 324, Issue 5934, p. 1530-1534
https://doi.org/10.1126/science.1158877

Ferroelectrically driven spatial carrier density modulation in graphene
journal, January 2015

Baeumer, Christoph; Saldana-Greco, Diomedes; Martirez, John Mark P.
Nature Communications, Vol. 6, Issue 1
https://doi.org/10.1038/ncomms7136

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current
journal, December 2016

Strikha, Maksym V.; Morozovska, Anna N.
Journal of Applied Physics, Vol. 120, Issue 21
https://doi.org/10.1063/1.4968797

Electronic transport in two-dimensional graphene
journal, May 2011

Das Sarma, S.; Adam, Shaffique; Hwang, E. H.
Reviews of Modern Physics, Vol. 83, Issue 2, p. 407-470
https://doi.org/10.1103/RevModPhys.83.407

A diode for ferroelectric domain-wall motion
journal, June 2015

Whyte, J. R.; Gregg, J. M.
Nature Communications, Vol. 6, Issue 1
https://doi.org/10.1038/ncomms8361

Interface-induced phenomena in polarization response of ferroelectric thin films
journal, September 2006

Tagantsev, A. K.; Gerra, G.
Journal of Applied Physics, Vol. 100, Issue 5
https://doi.org/10.1063/1.2337009

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface
journal, July 2013

Morozovska, Anna N.; Strikha, Maksym V.
Journal of Applied Physics, Vol. 114, Issue 1
https://doi.org/10.1063/1.4812244

The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions
journal, March 2007

Cheianov, V. V.; Fal'ko, V.; Altshuler, B. L.
Science, Vol. 315, Issue 5816
https://doi.org/10.1126/science.1138020

Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review
journal, January 2012

Strikha, M.
Ukrainian Journal of Physical Optics, Vol. 13, Issue 4
https://doi.org/10.3116/16091833/13/1/S5/2012

Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
journal, September 2008

Nemes-Incze, P.; Osváth, Z.; Kamarás, K.
Carbon, Vol. 46, Issue 11
https://doi.org/10.1016/j.carbon.2008.06.022

Identification of passive layer in ferroelectric thin films from their switching parameters
journal, August 1995

Tagantsev, A. K.; Landivar, M.; Colla, E.
Journal of Applied Physics, Vol. 78, Issue 4
https://doi.org/10.1063/1.360122

Chiral tunnelling and the Klein paradox in graphene
journal, August 2006

Katsnelson, M. I.; Novoselov, K. S.; Geim, A. K.
Nature Physics, Vol. 2, Issue 9
https://doi.org/10.1038/nphys384

Dielectric Constant in Paraelectric Perovskites
journal, August 1964

Rupprecht, G.; Bell, R. O.
Physical Review, Vol. 135, Issue 3A
https://doi.org/10.1103/PhysRev.135.A748

Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films
journal, December 2006

Jia, Chun-Lin; Nagarajan, Valanoor; He, Jia-Qing
Nature Materials, Vol. 6, Issue 1
https://doi.org/10.1038/nmat1808

Graphene Field-Effect Transistors with Ferroelectric Gating
journal, October 2010

Zheng, Yi; Ni, Guang-Xin; Toh, Chee-Tat
Physical Review Letters, Vol. 105, Issue 16
https://doi.org/10.1103/PhysRevLett.105.166602

Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures
journal, May 2010

Morozovska, A. N.; Eliseev, E. A.; Svechnikov, S. V.
Physical Review B, Vol. 81, Issue 20
https://doi.org/10.1103/PhysRevB.81.205308

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
journal, January 2016

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun
Nature Communications, Vol. 7, Issue 1
https://doi.org/10.1038/ncomms10429

Similar records in OSTI.GOV collections:

Inhibiting Klein Tunneling in a Graphene $p − n$ Junction without an External Magnetic Field

Journal Article Oh, Hyungju ; Coh, Sinisa ; Son, Young-Woo ; ... - Physical Review Letters
Cited by 2
https://doi.org/10.1103/PhysRevLett.117.016804
Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene $p − n$ Junctions

Journal Article Wang, Ke ; Harzheim, Achim ; Taniguchi, Takashi ; ... - Physical Review Letters
Cited by 3
https://doi.org/10.1103/PhysRevLett.122.146801
Tunneling Spectroscopy of Quantum Hall States in Bilayer Graphene $p - n$ Junctions

Journal Article Wang, Ke ; Harzheim, Achim ; Taniguchi, Takashi ; ... - Physical Review Letters

Not provided.
https://doi.org/10.1103/physrevlett.122.146801
Azimuthal Anisotropy of Heavy-Flavor Decay Electrons in $p$ -Pb Collisions at $\sqrt{s_{N N}} = 5.02 TeV$

Journal Article Acharya, S. ; Adamová, D. ; Adolfsson, J. ; ... - Physical Review Letters

Angular correlations between heavy-flavor decay electrons and charged particles at midrapidity ($|η| < 0.8$) are measured in $$p$$-Pb collisions at $$\sqrt{sNN}$$ = 5.02 TeV. The analysis is carried out for the 0%–20% (high) and 60%–100% (low) multiplicity ranges. The jet contribution in the correlation distribution from high-multiplicity events is removed by subtracting the distribution from low-multiplicity events. An azimuthal modulation remains after removing the jet contribution, similar to previous observations in two-particle angular correlation measurements for light-flavor hadrons. A Fourier decomposition of the modulation results in a positive second-order coefficient ($$v_2$$) for heavy-flavor decay electrons in the transverse momentum intervalmore »« less
Cited by 3
https://doi.org/10.1103/PhysRevLett.122.072301
Single-spin asymmetry of $J / ψ$ production in $p + p$ , $p + Al$ , and $p + Au$ collisions with transversely polarized proton beams at $\sqrt{s_{N N}} = 200 GeV$

Journal Article Aidala, C. ; Akiba, Y. ; Alfred, M. ; ... - Physical Review D

We report the transverse single-spin asymmetries of J/ψ production at forward and backward rapidity, 1.2 < | y | < 2.2 , as a function of J/ψ transverse momentum (pT) and Feynman- x (x _F). The data analyzed were recorded by the PHENIX experiment at the Relativistic Heavy Ion Collider in 2015 from p+p, p+Al, and p+Au collisions with transversely polarized proton beams at $$\sqrt{s}$$$$_ {NN}$$ = 200 GeV . At this collision energy, single-spin asymmetries for heavy-flavor particle production of p + p collisions provide access to the spin-dependent gluon distribution and higher-twist correlation functions inside the nucleon, suchmore »« less
Cited by 2
https://doi.org/10.1103/PhysRevD.98.012006

Similar Records

Title: p - n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

Citation Formats

Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric journal, June 2015

Ferroionic states in ferroelectric thin films journal, May 2017

Single gate p-n junctions in graphene-ferroelectric devices journal, May 2016

Conductivity of Graphene on Ferroelectric PVDF-TrFE [Провідність графену на сегнетоелектрику PVDF-TrFE] journal, June 2014

Ferroelectric domain triggers the charge modulation in semiconductors (invited) journal, August 2014

Phenomenological model of a 90° domain wall in Ba Ti O 3 -type ferroelectrics journal, September 2006

Colloquium : Andreev reflection and Klein tunneling in graphene journal, October 2008

Selective transmission of Dirac electrons and ballistic magnetoresistance of n − p junctions in graphene journal, July 2006

Nonlinear Screening and Ballistic Transport in a Graphene p − n Junction journal, March 2008

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene journal, August 2007

Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall journal, June 2016

Surface effects on phase transitions in ferroelectrics and dipolar magnets journal, August 1979

Electric Field Effect in Atomically Thin Carbon Films journal, October 2004

Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface journal, August 2014

General approach for the description of size effects in ferroelectric nanosystems journal, October 2009

Graphene: Status and Prospects journal, June 2009

Ferroelectrically driven spatial carrier density modulation in graphene journal, January 2015

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current journal, December 2016

Electronic transport in two-dimensional graphene journal, May 2011

A diode for ferroelectric domain-wall motion journal, June 2015

Interface-induced phenomena in polarization response of ferroelectric thin films journal, September 2006

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface journal, July 2013

The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions journal, March 2007

Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review journal, January 2012

Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy journal, September 2008

Identification of passive layer in ferroelectric thin films from their switching parameters journal, August 1995

Chiral tunnelling and the Klein paradox in graphene journal, August 2006

Dielectric Constant in Paraelectric Perovskites journal, August 1964

Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films journal, December 2006

Graphene Field-Effect Transistors with Ferroelectric Gating journal, October 2010

Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures journal, May 2010

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations journal, January 2016

Title: $p - n$ Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

Finite-size effects of hysteretic dynamics in multilayer graphene on a ferroelectric
journal, June 2015

Ferroionic states in ferroelectric thin films
journal, May 2017

Single gate p-n junctions in graphene-ferroelectric devices
journal, May 2016

Conductivity of Graphene on Ferroelectric PVDF-TrFE [Провідність графену на сегнетоелектрику PVDF-TrFE]
journal, June 2014

Ferroelectric domain triggers the charge modulation in semiconductors (invited)
journal, August 2014

Phenomenological model of a 90° domain wall in $Ba Ti O_{3}$ -type ferroelectrics
journal, September 2006

Colloquium : Andreev reflection and Klein tunneling in graphene
journal, October 2008

Selective transmission of Dirac electrons and ballistic magnetoresistance of $n − p$ junctions in graphene
journal, July 2006

Nonlinear Screening and Ballistic Transport in a Graphene $p − n$ Junction
journal, March 2008

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene
journal, August 2007

Ballistic conductivity of graphene channel with p-n junction at ferroelectric domain wall
journal, June 2016

Surface effects on phase transitions in ferroelectrics and dipolar magnets
journal, August 1979

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004

Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
journal, August 2014

General approach for the description of size effects in ferroelectric nanosystems
journal, October 2009

Graphene: Status and Prospects
journal, June 2009

Ferroelectrically driven spatial carrier density modulation in graphene
journal, January 2015

Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current
journal, December 2016

Electronic transport in two-dimensional graphene
journal, May 2011

A diode for ferroelectric domain-wall motion
journal, June 2015

Interface-induced phenomena in polarization response of ferroelectric thin films
journal, September 2006

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface
journal, July 2013

The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions
journal, March 2007

Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review
journal, January 2012

Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
journal, September 2008

Identification of passive layer in ferroelectric thin films from their switching parameters
journal, August 1995

Chiral tunnelling and the Klein paradox in graphene
journal, August 2006

Dielectric Constant in Paraelectric Perovskites
journal, August 1964

Unit-cell scale mapping of ferroelectricity and tetragonality in epitaxial ultrathin ferroelectric films
journal, December 2006

Graphene Field-Effect Transistors with Ferroelectric Gating
journal, October 2010

Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures
journal, May 2010

Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations
journal, January 2016