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Title: p - n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate

Abstract

The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.

Authors:
 [1];  [1];  [2];  [3];  [1]
  1. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. National Academy of Sciences of Ukraine (NASU), Kiev (Ukraine); Taras Shevchenko Kyiv National Univ., Kyiv (Ukraine)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1399918
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., and Morozovska, Anna N. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate. United States: N. p., 2017. Web. doi:10.1103/PhysRevApplied.8.024027.
Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., & Morozovska, Anna N. p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate. United States. doi:10.1103/PhysRevApplied.8.024027.
Kurchak, Anatolii I., Eliseev, Eugene A., Kalinin, Sergei V., Strikha, Maksym V., and Morozovska, Anna N. Wed . "p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate". United States. doi:10.1103/PhysRevApplied.8.024027.
@article{osti_1399918,
title = {p-n Junction Dynamics Induced in a Graphene Channel by Ferroelectric-Domain Motion in the Substrate},
author = {Kurchak, Anatolii I. and Eliseev, Eugene A. and Kalinin, Sergei V. and Strikha, Maksym V. and Morozovska, Anna N.},
abstractNote = {The p - n junction dynamics induced in a graphene channel by stripe-domain nucleation, motion, and reversal in a ferroelectric substrate is explored using a self-consistent approach based on Landau-Ginzburg-Devonshire phenomenology combined with classical electrostatics. Relatively low gate voltages are required to induce the hysteresis of ferroelectric polarization and graphene charge in response to the periodic gate voltage. Pronounced nonlinear hysteresis of graphene conductance with a wide memory window corresponds to high amplitudes of gate voltage. Also, we reveal the extrinsic size effect in the dependence of the graphene-channel conductivity on its length. We predict that the top-gate–dielectric-layer–graphene-channel–ferroelectric-substrate nanostructure considered here can be a promising candidate for the fabrication of the next generation of modulators and rectifiers based on the graphene p - n junctions.},
doi = {10.1103/PhysRevApplied.8.024027},
journal = {Physical Review Applied},
issn = {2331-7019},
number = 2,
volume = 8,
place = {United States},
year = {2017},
month = {8}
}