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Precise annealing of focal plane arrays for optical detection

Patent ·
OSTI ID:1399862

Precise annealing of identified defective regions of a Focal Plane Array ("FPA") (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
National Technology & Engineering Solutions of Sandia, LLC
Patent Number(s):
9,793,177
Application Number:
14/824,621
OSTI ID:
1399862
Country of Publication:
United States
Language:
English

References (1)

Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation journal March 2007