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Title: Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 322  μm

Authors:
ORCiD logo; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1399819
Grant/Contract Number:
SC0012704
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Optics
Additional Journal Information:
Journal Volume: 56; Journal Issue: 31; Related Information: CHORUS Timestamp: 2017-10-17 16:20:20; Journal ID: ISSN 1559-128X
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English

Citation Formats

Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Lu, Ming, and Belenky, Gregory. Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 322  μm. United States: N. p., 2017. Web. doi:10.1364/AO.56.000H74.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Lu, Ming, & Belenky, Gregory. Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 322  μm. United States. doi:10.1364/AO.56.000H74.
Feng, Tao, Hosoda, Takashi, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Lu, Ming, and Belenky, Gregory. 2017. "Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 322  μm". United States. doi:10.1364/AO.56.000H74.
@article{osti_1399819,
title = {Laterally coupled distributed feedback type-I quantum well cascade diode lasers emitting near 322  μm},
author = {Feng, Tao and Hosoda, Takashi and Shterengas, Leon and Kipshidze, Gela and Stein, Aaron and Lu, Ming and Belenky, Gregory},
abstractNote = {},
doi = {10.1364/AO.56.000H74},
journal = {Applied Optics},
number = 31,
volume = 56,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 18, 2018
Publisher's Accepted Manuscript

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  • The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm{sup 2} at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase withmore » current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.« less
  • We report the demonstration of distributed-feedback terahertz quantum-cascade lasers based on a first-order grating fabricated via a lateral corrugation in a double-sided metal ridge waveguide. The phase of the facet reflection was precisely set by lithographically defined facets by dry etching. Single-mode emission was observed at low to moderate injection currents, although multimode emission was observed far beyond threshold owing to spatial hole burning. Finite-element simulations were used to calculate the modal and threshold characteristics for these devices, with results in good agreement with experiments.
  • Mutual injection-locking properties of a coupled pair of multiple-quantum-well distributed feedback lasers with grating output couplers were investigated experimentally and theoretically. When the mutual injection locking occurred, the output of one laser decreased while that of the other increased. The locking curve was asymmetric and a stable and an unstable locking region existed. From the theoretical analysis, it was found that the phase delay with which the electric field emitted from each laser significantly influences the locking characteristics. The increase and decrease of the locked output power are caused by the phase delay. It is also shown that the lasermore » which receives the larger optical injection behaves like a slave laser and the laser which has less optical injection behaves like a master laser, and the shape of the locking curve is determined by the balance between the {alpha} parameter and the thermal resistance.« less
  • Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. The authors demonstrate InGaAs-GaAs-AlGaAs DFB lasers fabricated from a single epitaxial growth using lateral evanescent coupling of the optical field to a surface grating etched along the sides of the ridge. A CW threshold current of 25 mA and external quantum efficiency of 0.48 mW/mA per facet were measured for a 1 mm cavity length device with anti-reflection coated facets. Single-mode output powers as high as 11 mW per facet at 935 nm wavelength were attained. A coupling coefficient of at leastmore » 5.8 cm{sup {minus}1} was calculated from the subthreshold spectrum taking into account the 2% residual facet reflectivity.« less
  • Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10 μm. Eight-band k·p approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSbmore » and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.« less