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Title: Using gapped topological surface states of Bi 2Se 3 films in a field effect transistor

Abstract

Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi 2Se 3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible to use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.

Authors:
 [1]; ORCiD logo [1]
  1. Univ. of Missouri, Columbia, MO (United States). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Univ. of Missouri, Columbia, MO (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1399574
Alternate Identifier(s):
OSTI ID: 1361775
Grant/Contract Number:
SC0014607
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 6; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Topological insulator

Citation Formats

Sun, Jifeng, and Singh, David J. Using gapped topological surface states of Bi2Se3 films in a field effect transistor. United States: N. p., 2017. Web. doi:10.1063/1.4975819.
Sun, Jifeng, & Singh, David J. Using gapped topological surface states of Bi2Se3 films in a field effect transistor. United States. doi:10.1063/1.4975819.
Sun, Jifeng, and Singh, David J. Wed . "Using gapped topological surface states of Bi2Se3 films in a field effect transistor". United States. doi:10.1063/1.4975819. https://www.osti.gov/servlets/purl/1399574.
@article{osti_1399574,
title = {Using gapped topological surface states of Bi2Se3 films in a field effect transistor},
author = {Sun, Jifeng and Singh, David J.},
abstractNote = {Three dimensional topological insulators are insulators with topologically protected surface states that can have a high band velocity and high mobility at room temperature. This then suggests electronic applications that exploit these surface states, but the lack of a band gap poses a fundamental difficulty. We report a first principles study based on density functional theory for thin Bi2Se3 films in the context of a field effect transistor. It is known that a gap is induced in thin layers due to hybridization between the top and bottom surfaces, but it is not known whether it is possible to use the topological states in this type of configuration. In particular, it is unclear whether the benefits of topological protection can be retained to a sufficient degree. We also show that there is a thickness regime in which the small gap induced by hybridization between the two surfaces is sufficient to obtain transistor operation at room temperature, and furthermore, that the band velocity and spin texture that are important for the mobility are preserved for Fermi levels of relevance to device application.},
doi = {10.1063/1.4975819},
journal = {Journal of Applied Physics},
number = 6,
volume = 121,
place = {United States},
year = {Wed Feb 08 00:00:00 EST 2017},
month = {Wed Feb 08 00:00:00 EST 2017}
}

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