AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers
- Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science Engineering
- Tivra Corporation, Oakland, CA (United States)
- Tivra Corporation, Oakland, CA (United States); Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm-2 range.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- AC05-00OR22725; FA8650-15-M-1912; HC1047-05-D4005
- OSTI ID:
- 1399403
- Journal Information:
- ECS Journal of Solid State Science and Technology, Vol. 6, Issue 11; ISSN 2162-8769
- Publisher:
- Electrochemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
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