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Title: AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 10 8 cm -2 range.

Authors:
 [1];  [2];  [1];  [1];  [3];  [3];  [3];  [4];  [4];  [5]
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Chemical Engineering
  2. Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science Engineering
  3. Tivra Corporation, Oakland, CA (United States)
  4. Tivra Corporation, Oakland, CA (United States); Arizona State Univ., Tempe, AZ (United States). Dept. of Physics
  5. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1399403
Grant/Contract Number:
AC05-00OR22725; FA8650-15-M-1912; HC1047-05-D4005
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
ECS Journal of Solid State Science and Technology
Additional Journal Information:
Journal Volume: 6; Journal Issue: 11; Journal ID: ISSN 2162-8769
Publisher:
Electrochemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., and Kravchenko, Ivan I.. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers. United States: N. p., 2017. Web. doi:10.1149/2.0161711jss.
Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., & Kravchenko, Ivan I.. AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers. United States. doi:10.1149/2.0161711jss.
Ren, Fan, Pearton, Stephen J., Ahn, Shihyun, Lin, Yi-Hsuan, Machuca, Francisco, Weiss, Robert, Welsh, Alex, McCartney, Martha R., Smith, David J., and Kravchenko, Ivan I.. Tue . "AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers". United States. doi:10.1149/2.0161711jss. https://www.osti.gov/servlets/purl/1399403.
@article{osti_1399403,
title = {AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers},
author = {Ren, Fan and Pearton, Stephen J. and Ahn, Shihyun and Lin, Yi-Hsuan and Machuca, Francisco and Weiss, Robert and Welsh, Alex and McCartney, Martha R. and Smith, David J. and Kravchenko, Ivan I.},
abstractNote = {AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter (“a-parameter”) to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. Finally, the estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm-2 range.},
doi = {10.1149/2.0161711jss},
journal = {ECS Journal of Solid State Science and Technology},
number = 11,
volume = 6,
place = {United States},
year = {Tue Sep 26 00:00:00 EDT 2017},
month = {Tue Sep 26 00:00:00 EDT 2017}
}

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