Characterization of defects in copper antimony disulfide

Willian de Souza Lucas, Francisco; Peng, Haowei; Johnston, Steve; Dippo, Patricia C.; Lany, Stephan; Mascaro, Lucia H.; Zakutayev, Andriy

doi:10.1039/C7TA07012H

Title: Characterization of defects in copper antimony disulfide

Journal Article · Tue Sep 19 00:00:00 EDT 2017 · Journal of Materials Chemistry. A

DOI:https://doi.org/10.1039/C7TA07012H· OSTI ID:1399356

^[1]; Peng, Haowei ^[2]; Johnston, Steve ^[2]; Dippo, Patricia C. ^[2]; Lany, Stephan ^[2]; Mascaro, Lucia H. ^[3];

^[2]

National Renewable Energy Lab. (NREL), Golden, CO (United States); Federal Univ., Sao Carlos (Brazil)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Federal Univ., Sao Carlos (Brazil)

Copper antimony disulfide (CuSbS₂) has several excellent bulk optoelectronic properties for photovoltaic absorber applications. Here, we report on the defect properties in CuSbS₂thin film materials and photovoltaic devices studied using several experimental methods supported by theoretical calculations.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1399356

Report Number(s):: NREL/JA-5K00-70120; JMCAET

Journal Information:: Journal of Materials Chemistry. A, Vol. 5, Issue 41; ISSN 2050-7488

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 24 works

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Spray pyrolysis deposited CuSbS2 absorber layers for thin-film solar cells Wan, Lei; Guo, Xu; Fang, Yingcui Journal of Materials Science: Materials in Electronics, Vol. 30, Issue 24 https://doi.org/10.1007/s10854-019-02531-2	journal	November 2019
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