Memristive devices from ZnO nanowire bundles and meshes

Puzyrev, Y. S.; Shen, X.; Zhang, Cher Xuan; Hachtel, Jordan A.; Ni, Kai; Choi, Bo K.; Zhang, Enxia -X.; Ovchinnikov, Oleg S.; Schrimpf, R. D.; Fleetwood, D. M.; Pantelides, Sokrates T.

doi:10.1063/1.5008265

Title: Memristive devices from ZnO nanowire bundles and meshes

Journal Article · Fri Oct 13 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5008265· OSTI ID:1476392

Puzyrev, Y. S. ^[1]; Shen, X. ^[2]; Zhang, Cher Xuan ^[3];

^[1]; Ni, Kai ^[3]; Choi, Bo K. ^[4]; Zhang, Enxia -X. ^[3]; Ovchinnikov, Oleg S. ^[1];

^[3]; Fleetwood, D. M. ^[5]; Pantelides, Sokrates T. ^[6]

Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Univ. of Memphis, Memphis, TN (United States). Dept. of Physics and Materials Science
Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
Vanderbilt Univ., Nashville, TN (United States). Vanderbilt Inst. of Nanoscale Science and Engineering
Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division

Here, we report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC)

Grant/Contract Number:: AC05-00OR22725; DMR-1207241; FG02-09ER46554; ACI-1053575

OSTI ID:: 1476392

Alternate ID(s):: OSTI ID: 1399278; OSTI ID: 1597849

Journal Information:: Applied Physics Letters, Vol. 111, Issue 15; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 9 works

Citation information provided by
Web of Science

References (22)

The missing memristor found Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R. Nature, Vol. 453, Issue 7191 https://doi.org/10.1038/nature06932	journal	May 2008
Nanoionics-based resistive switching memories Waser, Rainer; Aono, Masakazu Nature Materials, Vol. 6, Issue 11, p. 833-840 https://doi.org/10.1038/nmat2023	journal	November 2007
Resistive Switching in Single Epitaxial ZnO Nanoislands Qi, Jing; Olmedo, Mario; Ren, Jingjian ACS Nano, Vol. 6, Issue 2 https://doi.org/10.1021/nn204809a	journal	January 2012
A ZnO nanowire resistive switch Karthik, K. R. G.; Ramanujam Prabhakar, Rajiv; Hai, L. Applied Physics Letters, Vol. 103, Issue 12 https://doi.org/10.1063/1.4821994	journal	September 2013
Nudged elastic band method for finding minimum energy paths of transitions JÓNsson, Hannes; Mills, Greg; Jacobsen, Karsten W. Proceedings of the International School of Physics, Classical and Quantum Dynamics in Condensed Phase Simulations https://doi.org/10.1142/9789812839664_0016	conference	November 2011
Memristive devices and systems Chua, L. O. Proceedings of the IEEE, Vol. 64, Issue 2 https://doi.org/10.1109/PROC.1976.10092	journal	January 1976
Zinc oxide nanostructures: growth, properties and applications Wang, Zhong Lin Journal of Physics: Condensed Matter, Vol. 16, Issue 25 https://doi.org/10.1088/0953-8984/16/25/R01	journal	June 2004
Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices Lee, Seunghyup; Kim, Heejin; Yun, Dong-Jin Applied Physics Letters, Vol. 95, Issue 26 https://doi.org/10.1063/1.3280864	journal	December 2009
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications Chang, Wen-Yuan; Lai, Yen-Chao; Wu, Tai-Bor Applied Physics Letters, Vol. 92, Issue 2 https://doi.org/10.1063/1.2834852	journal	January 2008
Molecularly inherent voltage-controlled conductance switching Blum, Amy Szuchmacher; Kushmerick, James G.; Long, David P. Nature Materials, Vol. 4, Issue 2 https://doi.org/10.1038/nmat1309	journal	January 2005
Reproducible switching effect in thin oxide films for memory applications Beck, A.; Bednorz, J. G.; Gerber, Ch. Applied Physics Letters, Vol. 77, Issue 1 https://doi.org/10.1063/1.126902	journal	July 2000
A Cu/ZnO Nanowire/Cu Resistive Switching Device Li, Lijie; Zhang, Yan; Chew, Zhengjun Nano-Micro Letters, Vol. 5, Issue 3 https://doi.org/10.1007/BF03353745	journal	July 2013
Electric-pulse-induced reversible resistance change effect in magnetoresistive films Liu, S. Q.; Wu, N. J.; Ignatiev, A. Applied Physics Letters, Vol. 76, Issue 19 https://doi.org/10.1063/1.126464	journal	May 2000
A New Theoretical Insight Into ZnO NWs Memristive Behavior Raffone, Federico; Risplendi, Francesca; Cicero, Giancarlo Nano Letters, Vol. 16, Issue 4 https://doi.org/10.1021/acs.nanolett.6b00085	journal	March 2016
$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode IEEE Electron Device Letters, Vol. 30, Issue 7 https://doi.org/10.1109/LED.2009.2021004	journal	July 2009
Vacancy breathing by grain boundaries—a mechanism of memristive switching in polycrystalline oxides Shen, Xiao; Puzyrev, Yevgeniy S.; Pantelides, Sokrates T. MRS Communications, Vol. 3, Issue 3 https://doi.org/10.1557/mrc.2013.32	journal	September 2013
High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity Shen, Xiao; Pennycook, Timothy J.; Hernandez-Martin, David Advanced Materials Interfaces, Vol. 3, Issue 16 https://doi.org/10.1002/admi.201600086	journal	May 2016
Highly stable resistive switching on monocrystalline ZnO Shih, Andy; Zhou, Wendi; Qiu, Julia Nanotechnology, Vol. 21, Issue 12 https://doi.org/10.1088/0957-4484/21/12/125201	journal	February 2010
2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO ₃ Shen, Xiao; Yin, Kuibo; Puzyrev, Yevgeniy S. Advanced Electronic Materials, Vol. 1, Issue 5 https://doi.org/10.1002/aelm.201500019	journal	March 2015
Inhomogeneous Electron Gas Hohenberg, P.; Kohn, W. Physical Review, Vol. 136, Issue 3B, p. B864-B871 https://doi.org/10.1103/PhysRev.136.B864	journal	November 1964
Self-Consistent Equations Including Exchange and Correlation Effects Kohn, W.; Sham, L. J. Physical Review, Vol. 140, Issue 4A, p. A1133-A1138 https://doi.org/10.1103/PhysRev.140.A1133	journal	November 1965
Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage Song, Jinhui; Zhang, Yan; Xu, Chen Nano Letters, Vol. 11, Issue 7 https://doi.org/10.1021/nl2011966	journal	July 2011

Cited By (2)

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires Milano, Gianluca; Porro, Samuele; Valov, Ilia Advanced Electronic Materials, Vol. 5, Issue 9 https://doi.org/10.1002/aelm.201800909	journal	November 2018
A resistive switching memory device with a negative differential resistance at room temperature Kadhim, Mayameen S.; Yang, Feng; Sun, Bai Applied Physics Letters, Vol. 113, Issue 5 https://doi.org/10.1063/1.5037191	journal	July 2018

Similar Records

Memristive behavior in a junctionless flash memory cell

Journal Article · Mon Jun 08 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1476392

Orak, Ikram; Ürel, Mustafa; Dana, Aykutlu; +1 more

Effect of Material Structure on Photoluminescence of ZnO/MgO Core-Shell Nanowires

Journal Article · Fri Jan 19 00:00:00 EST 2018 · ChemNanoMat · OSTI ID:1476392

Marvinney, Claire E.; Shen, Xiao; McBride, James R.; +6 more

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Journal Article · Fri May 27 00:00:00 EDT 2016 · Advanced Materials Interfaces · OSTI ID:1476392

Shen, Xiao; Pennycook, Timothy J.; Hernandez-Martin, David; +12 more

Related Subjects

42 ENGINEERING
77 NANOSCIENCE AND NANOTECHNOLOGY
memristor
x-rays
metal oxides
magnetic materials
density functional theory
electric power
transistors
nanowires
first-principle calculations
semiconductor devices

Title: Memristive devices from ZnO nanowire bundles and meshes

Citation Formats

References (22)

Cited By (2)

Similar Records

Related Subjects