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Title: Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates

Abstract

Here, the discovery of an enhanced superconducting transition temperature Tc in monolayers of FeSe grown on several oxide substrates has opened a new route to high- Tc superconductivity through interface engineering. One proposal for the origin of the observed enhancement is an electronphonon (e-ph) interaction across the interface that peaked at small momentum transfers. In this paper, we examine the implications of such a coupling on the phononic properties of the system. We show that a strong forward scattering leads to a sizable broadening of phonon lineshape, which may result in charge instabilities at long-wavelengths. However, we further find that the inclusion of Coulombic screening significantly reduces the phonon broadening. Our results show that one might not expect anomalously broad phonon linewidths in the FeSe interface systems, despite the fact that the e-ph interaction has a strong peak in the forward scattering (small \bfq ) direction.

Authors:
 [1];  [2];  [3];  [1]
  1. Univ. of Tennessee, Knoxville, TN (United States)
  2. Univ. of California, Santa Barbara, CA (United States)
  3. Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1399226
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 5; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wang, Yan, Rademaker, Louk, Dagotto, Elbio R., and Johnston, Steven. Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.054515.
Wang, Yan, Rademaker, Louk, Dagotto, Elbio R., & Johnston, Steven. Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates. United States. doi:10.1103/PhysRevB.96.054515.
Wang, Yan, Rademaker, Louk, Dagotto, Elbio R., and Johnston, Steven. Fri . "Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates". United States. doi:10.1103/PhysRevB.96.054515.
@article{osti_1399226,
title = {Phonon linewidth due to electron-phonon interactions with strong forward scattering in FeSe thin films on oxide substrates},
author = {Wang, Yan and Rademaker, Louk and Dagotto, Elbio R. and Johnston, Steven},
abstractNote = {Here, the discovery of an enhanced superconducting transition temperature Tc in monolayers of FeSe grown on several oxide substrates has opened a new route to high-Tc superconductivity through interface engineering. One proposal for the origin of the observed enhancement is an electronphonon (e-ph) interaction across the interface that peaked at small momentum transfers. In this paper, we examine the implications of such a coupling on the phononic properties of the system. We show that a strong forward scattering leads to a sizable broadening of phonon lineshape, which may result in charge instabilities at long-wavelengths. However, we further find that the inclusion of Coulombic screening significantly reduces the phonon broadening. Our results show that one might not expect anomalously broad phonon linewidths in the FeSe interface systems, despite the fact that the e-ph interaction has a strong peak in the forward scattering (small \bfq ) direction.},
doi = {10.1103/PhysRevB.96.054515},
journal = {Physical Review B},
issn = {2469-9950},
number = 5,
volume = 96,
place = {United States},
year = {2017},
month = {8}
}