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Title: Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1399207
Report Number(s):
SAND2016-9983PE
648039
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Invited Seminar at EPFL (Ecole Polytechnique F?d?rale Lausanne) held October 17-18, 2016 in Lausanne, Switzerland.
Country of Publication:
United States
Language:
English

Citation Formats

Schultz, Peter A. Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective.. United States: N. p., 2016. Web.
Schultz, Peter A. Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective.. United States.
Schultz, Peter A. Sat . "Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective.". United States. doi:. https://www.osti.gov/servlets/purl/1399207.
@article{osti_1399207,
title = {Modeling charged defects and defect levels in semiconductors and oxides with DFT: An improved inside-out perspective.},
author = {Schultz, Peter A.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Oct 01 00:00:00 EDT 2016},
month = {Sat Oct 01 00:00:00 EDT 2016}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

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