skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photonic-band-gap architectures for long-lifetime room-temperature polariton condensation in GaAs quantum wells

; ;
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review A
Additional Journal Information:
Journal Volume: 96; Journal Issue: 4; Related Information: CHORUS Timestamp: 2017-10-12 13:23:00; Journal ID: ISSN 2469-9926
American Physical Society
Country of Publication:
United States

Citation Formats

Jiang, Jian-Hua, Vasudev, Pranai, and John, Sajeev. Photonic-band-gap architectures for long-lifetime room-temperature polariton condensation in GaAs quantum wells. United States: N. p., 2017. Web. doi:10.1103/PhysRevA.96.043827.
Jiang, Jian-Hua, Vasudev, Pranai, & John, Sajeev. Photonic-band-gap architectures for long-lifetime room-temperature polariton condensation in GaAs quantum wells. United States. doi:10.1103/PhysRevA.96.043827.
Jiang, Jian-Hua, Vasudev, Pranai, and John, Sajeev. 2017. "Photonic-band-gap architectures for long-lifetime room-temperature polariton condensation in GaAs quantum wells". United States. doi:10.1103/PhysRevA.96.043827.
title = {Photonic-band-gap architectures for long-lifetime room-temperature polariton condensation in GaAs quantum wells},
author = {Jiang, Jian-Hua and Vasudev, Pranai and John, Sajeev},
abstractNote = {},
doi = {10.1103/PhysRevA.96.043827},
journal = {Physical Review A},
number = 4,
volume = 96,
place = {United States},
year = 2017,
month =

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 12, 2018
Publisher's Accepted Manuscript

Save / Share:
  • We present a comprehensive study of the growth and fabrication of Bragg-spaced quantum wells, a type of resonant photonic band gap structure. To begin, we considered the impact of disorder and drift in the periodicity of the quantum wells on the formation of the resonant photonic band gap. We found that steady decrease in the periodicity greater than a few percent leads to collapse of the resonant photonic band gap, while random disorder in the quantum well periodicity of several percent leads to extra peaks in the resonant photonic band gap due to coupling to ''intermediate band'' states. Next, wemore » optimized the growth of low x (x{<=}0.06) In{sub x}Ga{sub 1-x}As/GaAs quantum wells, the building block of Bragg-spaced quantum well structures. Growth parameters optimized include growth rate, modulation of substrate temperature for barrier/quantum well, and V/III flux ratio. Fast growth of quantum wells was achieved with some of the narrowest heavy-hole exciton linewidths (0.37 meV) reported to date for quantum wells of these widths. Using the optimized InGaAs/GaAs quantum wells as a building block, we grew near-ideal N=210 Bragg-spaced quantum well structures. By monitoring growth rates during growth with reflection high energy electron diffraction and correcting drift by adjusting cell temperature, drift and disorder in periodicity were kept to less than 1%. We see no fundamental barriers to growing much longer structures such as N=1000 periods or longer.« less
  • We demonstrated the lasing action and remarkable reduction in long radiative lifetimes of type-II GaSb/GaAs quantum dots using a circular photonic-crystal nano-cavity with high Purcell factors. The associated enhancement in carrier recombination was surprisingly high and could even surpass type-I counterparts in similar conditions. These phenomena reveal that the type-II sample exhibited extremely low nonradiative recombination so that weak radiative transitions were more dominant than expected. The results indicate that type-II nanostructures may be advantageous for applications which require controllable radiative transitions but low nonradiative depletions.
  • Room temperature optical absorption process is observed in ultrathin quantum wells (QWs) and quantum dots (QDs) of InP/GaAs type-II band alignment system using surface photovoltage spectroscopy technique, where no measurable photoluminescence signal is available. Clear signature of absorption edge in the sub band gap region of GaAs barrier layer is observed for the ultrathin QWs and QDs, which red shifts with the amount of deposited InP material. Movement of photogenerated holes towards the sample surface is proposed to be the main mechanism for the generation of surface photovoltage in type-II ultrathin QWs and QDs. QDs of smaller size are foundmore » to be free from the dislocations as confirmed by the high resolution transmission electron microscopy images.« less
  • The authors report on the first intersubband-interband double-resonance experiments in undoped GaAs/Al{sub 0.33}Ga{sub 0.67}As multiple quantum well structures at room temperature. The well width is 78 {angstrom}. A Ti:Sapphire laser is used to pump the interband transitions while the first intersubband transition is probed with a CO{sub 2} laser. The intersubband absorption is found to peak at 10.6 {mu}m and a 10 meV linewidth is measured. The absorption signal is also recorded at a fixed CO{sub 2} tuning while varying the pump laser wavelength from 700 to 850 nm. A high resolution spectrum is obtained which reflects the step-like densitymore » of states with sharp peaks at the exciton resonances.« less
  • We report operation of a new surface-emitting laser. This epitaxial laser is fabricated with molecular beam epitaxy by the growth of quarter-wave high reflectors of AlAs/Al/sub 0.4/Ga/sub 0.6/As (710 A/630 A) which surround a multiple quantum well of GaAs/Al/sub 0.4/Ga/sub 0.6/As (100 A/200 A). We characterize the structure with cw spectroscopy (absorption, reflection, and luminescence) and investigate stimulated emission spectra under pulsed photopumping. When photopumped, the structure lases in its as-grown condition without need of substrate removal, cleaving, or heatsinking. The lasing wavelength is as short as 7400 A and can be tuned to as long as 8400 Amore » by positioning the pump spot to different regions across the wafer. The pulsed threshold irradiance has a very weak temperature dependence varying from 6 x 10/sup 5/ W/cm/sup 2/ at 4.2 K to 1.6 x 10/sup 6/ W/cm/sup 2/ at 295 K.« less