Model-Based Dead Time Optimization for Voltage-Source Converters Utilizing Silicon Carbide Semiconductors
- The Univ. of Tennessee, Knoxville, TN (United States)
- Tsinghua Univ., Beijing (China)
Dead time significantly affects the reliability, power quality, and efficiency of voltage-source converters. For silicon carbide (SiC) devices, considering the high sensitivity of turn-off time to the operating conditions (> 5× difference between light load and full load) and characteristics of inductive loads (> 2× difference between motor load and inductor), as well as large additional energy loss induced by the freewheeling diode conduction during the superfluous dead time (~15% of the switching loss), then the traditional fixed dead time setting becomes inappropriate. This paper introduces an approach to adaptively regulate the dead time considering the current operating condition and load characteristics via synthesizing online monitored turn-off switching parameters in the microcontroller with an embedded preset optimization model. Here, based on a buck converter built with 1200-V SiC MOSFETs, the experimental results show that the proposed method is able to ensure reliability and reduce power loss by 12% at full load and 18.2% at light load (8% of the full load in this case study).
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1399115
- Journal Information:
- IEEE Transactions on Power Electronics, Vol. 32, Issue 11; ISSN 0885-8993
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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