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Title: Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization

Abstract

A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.

Inventors:
;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1399090
Patent Number(s):
9,773,991
Application Number:
14/819,248
Assignee:
UCHICAGO ARGONNE, LLC ANL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Aug 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Martinson, Alex B., and Kim, In Soo. Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization. United States: N. p., 2017. Web.
Martinson, Alex B., & Kim, In Soo. Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization. United States.
Martinson, Alex B., and Kim, In Soo. Tue . "Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization". United States. doi:. https://www.osti.gov/servlets/purl/1399090.
@article{osti_1399090,
title = {Non-hydrolytic metal oxide films for perovskite halide overcoating and stabilization},
author = {Martinson, Alex B. and Kim, In Soo},
abstractNote = {A method of protecting a perovskite halide film from moisture and temperature includes positioning the perovskite halide film in a chamber. The chamber is maintained at a temperature of less than 200 degrees Celsius. An organo-metal compound is inserted into the chamber. A non-hydrolytic oxygen source is subsequently inserted into the chamber. The inserting of the organo-metal compound and subsequent inserting of the non-hydrolytic oxygen source into the chamber is repeated for a predetermined number of cycles. The non-hydrolytic oxygen source and the organo-metal compound interact in the chamber to deposit a non-hydrolytic metal oxide film on perovskite halide film. The non-hydrolytic metal oxide film protects the perovskite halide film from relative humidity of greater than 35% and a temperature of greater than 150 degrees Celsius, respectively.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 26 00:00:00 EDT 2017},
month = {Tue Sep 26 00:00:00 EDT 2017}
}

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Works referenced in this record:

Improvement of the humidity stability of organic–inorganic perovskite solar cells using ultrathin Al2O3 layers prepared by atomic layer deposition
journal, January 2015

  • Dong, Xu; Fang, Xiang; Lv, Minghang
  • Journal of Materials Chemistry A, Vol. 3, Issue 10, p. 5360-5367
  • DOI: 10.1039/C4TA06128D

Carbon Nanotube/Polymer Composites as a Highly Stable Hole Collection Layer in Perovskite Solar Cells
journal, September 2014

  • Habisreutinger, Severin N.; Leijtens, Tomas; Eperon, Giles E.
  • Nano Letters, Vol. 14, Issue 10, p. 5561-5568
  • DOI: 10.1021/nl501982b

Non-Aqueous Routes to Metal Oxide Thin Films by Atomic Layer Deposition
journal, April 2008

  • Rauwel, Erwan; Clavel, Guylhaine; Willinger, Marc-Georg
  • Angewandte Chemie International Edition, Vol. 47, Issue 19, p. 3592-3595
  • DOI: 10.1002/anie.200705550

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
journal, April 2000