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Title: Weak antilocalization effect due to topological surface states in Bi 2 Se 2.1 Te 0.9

Authors:
 [1];  [2];  [3];  [4];  [5]
  1. Idaho National Laboratory, 2525 Fremont Ave., Idaho Falls, Idaho 83402, USA
  2. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306-4005, USA
  3. Institute of Optical Materials and Technology, Bulgarian Academy of Sciences, Academy G. Bontchev Street 109, Sofia 1113, Bulgaria
  4. TCSUH and Department of Physics, University of Houston, 3369 Cullen Boulevard, Houston, Texas 77204-5002, USA
  5. TCSUH and Department of Physics, University of Houston, 3369 Cullen Boulevard, Houston, Texas 77204-5002, USA, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1399058
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 122; Journal Issue: 14; Related Information: CHORUS Timestamp: 2018-02-14 13:41:08; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C. W. Weak antilocalization effect due to topological surface states in Bi 2 Se 2.1 Te 0.9. United States: N. p., 2017. Web. doi:10.1063/1.4997947.
Shrestha, K., Graf, D., Marinova, V., Lorenz, B., & Chu, C. W. Weak antilocalization effect due to topological surface states in Bi 2 Se 2.1 Te 0.9. United States. doi:10.1063/1.4997947.
Shrestha, K., Graf, D., Marinova, V., Lorenz, B., and Chu, C. W. 2017. "Weak antilocalization effect due to topological surface states in Bi 2 Se 2.1 Te 0.9". United States. doi:10.1063/1.4997947.
@article{osti_1399058,
title = {Weak antilocalization effect due to topological surface states in Bi 2 Se 2.1 Te 0.9},
author = {Shrestha, K. and Graf, D. and Marinova, V. and Lorenz, B. and Chu, C. W.},
abstractNote = {},
doi = {10.1063/1.4997947},
journal = {Journal of Applied Physics},
number = 14,
volume = 122,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 11, 2018
Publisher's Accepted Manuscript

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  • We explore the phase coherence of thin films of the topological insulator material Bi{sub 2}Se{sub 2}Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. Since PLD is an inexpensive technique, with the possibility to integrate with other materials, one can make devices which canmore » be extremely useful for low power spintronics and topological quantum computation.« less
  • Cited by 4
  • In typical topological insulator (TI) systems the TI is bordered by a non-TI insulator, and the surrounding conventional insulators, including vacuum, are not generally treated as part of the TI system. Here, we implement a material system where the roles are reversed, and the topological surface states form around the non-TI (instead of the TI) layers. This is realized by growing a layer of the tunable non-TI (Bi 1-xIn x) 2Se 3 in between two layers of the TI Bi 2Se 3 using the atomically precise molecular beam epitaxy technique. On this tunable inverse topological platform, we systematically vary themore » thickness and the composition of the (Bi 1-xIn x) 2Se 3 layer and show that this tunes the coupling between the TI layers from strongly coupled metallic to weakly coupled, and finally to a fully decoupled insulating regime. This system can be used to probe the fundamental nature of coupling in TI materials and provides a tunable insulating layer for TI devices.« less
  • We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing amore » surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.« less
  • High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109% and high carrier mobility up to 2950 cm{sup 2}/V s are experimentally observed at temperatures below 150 K. The low-field MR data show evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originatesmore » from the bulk contribution owing to the strong spin-orbital coupling.« less