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Title: Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li 2 Si 2 O 5 to lithium-rich Li 8 SiO 6

Authors:
 [1];  [2];  [3];  [3];  [1]
  1. Department of Mechanical Engineering, University of Colorado Boulder, 1111 Engineering Dr. UCB 427, Boulder, Colorado 80309
  2. Sandia National Laboratories, 1515 Eubank Blvd SE, MS 0613, Albuquerque, New Mexico 87123
  3. Sandia National Laboratories, 1515 Eubank Blvd SE, MS 0886, Albuquerque, New Mexico 87123
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1399049
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
Additional Journal Information:
Journal Volume: 35; Journal Issue: 6; Related Information: CHORUS Timestamp: 2018-02-14 09:35:31; Journal ID: ISSN 0734-2101
Publisher:
American Vacuum Society
Country of Publication:
United States
Language:
English

Citation Formats

Coyle, Jaclyn, Apblett, Christopher, Brumbach, Michael, Ohlhausen, James, and Stoldt, Conrad. Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li 2 Si 2 O 5 to lithium-rich Li 8 SiO 6. United States: N. p., 2017. Web. doi:10.1116/1.4998726.
Coyle, Jaclyn, Apblett, Christopher, Brumbach, Michael, Ohlhausen, James, & Stoldt, Conrad. Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li 2 Si 2 O 5 to lithium-rich Li 8 SiO 6. United States. doi:10.1116/1.4998726.
Coyle, Jaclyn, Apblett, Christopher, Brumbach, Michael, Ohlhausen, James, and Stoldt, Conrad. 2017. "Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li 2 Si 2 O 5 to lithium-rich Li 8 SiO 6". United States. doi:10.1116/1.4998726.
@article{osti_1399049,
title = {Structural and compositional characterization of RF magnetron cosputtered lithium silicate films: From Li 2 Si 2 O 5 to lithium-rich Li 8 SiO 6},
author = {Coyle, Jaclyn and Apblett, Christopher and Brumbach, Michael and Ohlhausen, James and Stoldt, Conrad},
abstractNote = {},
doi = {10.1116/1.4998726},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 6,
volume = 35,
place = {United States},
year = 2017,
month =
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on October 11, 2018
Publisher's Accepted Manuscript

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  • The simultaneous sputtering of ZnO and Ga{sub 2}O{sub 3} by electron cyclotron resonance and rf magnetron plasma sources produced Ga-doped ZnO (GZO) films with continuously varying Ga concentration over the substrate surface. Combinatorial evaluation of electrical and optical properties of GZO film grown on silica glass substrate without heater annealing enabled identification of minimum resistivity (0.5 m{Omega} cm) at a Ga{sub 2}O{sub 3} content of 5.5 wt % with an optical transmittance of 90% in the visible wavelength. The monotonically decreasing mobility that was associated with increasing carrier concentration as Ga{sub 2}O{sub 3} content was increased indicated that conduction wasmore » governed by ionized impurity scattering. Above the critical Ga{sub 2}O{sub 3} content (6 wt %), carrier concentration decreased since excess Ga atoms that were incorporated beyond the solubility limit at Zn sites hindered large crystalline domains from forming. The ZnO (002) x-ray diffraction peak was suppressed and peaks assigned to Ga{sub 2}O{sub 3} were observed at high Ga{sub 2}O{sub 3} content. The optimum Ga{sub 2}O{sub 3} content shifted to 3.5 wt % at a deposition temperature of 200 deg. C and 2.5 wt % at 300 deg. C, and the minimum resistivity was further decreased to 0.28 m{Omega} cm at 200 deg. C. However, the resistivities at these elevated temperatures were incredibly high both at the lower and higher side of the optimum Ga{sub 2}O{sub 3} content.« less
  • The results of structural and magnetic measurements on a series of films produced by cosputtering Pr{sub 21}Fe{sub 72}B{sub 7} and Pr are reported. The materials were deposited serially, 10--200 A at a time, onto 700 {degree}C Ta substrates attached to a computer-controlled stepping motor. The structure of the resulting films was examined by large- and small-angle x-ray diffraction, scanning electron microscopy, and by microprobe analysis. Magnetic measurements were made at temperatures from 4.2 to 300 K, in fields up to 80 kOe in a vibrating sample magnetometer. The films appear to consist of 1-{mu}m grains of Pr{sub 2}Fe{sub 14}B withmore » their {ital c} axes oriented perpendicular to the film plane, surrounded by a Pr-rich phase. The maximum room-temperature coercivity discovered so far is almost 20 kOe, which is close to the values reported for bulk Pr{sub 2}Fe{sub 14}B magnets.« less
  • Microcrystalline indium oxide (InO{sub x}) films with thickness of 120--1600 nm were prepared by dc reactive magnetron sputtering in various mixtures of oxygen in argon at room temperature. The depositions were carried out onto Corning 7059 glass and silicon substrates. The conductivity of the as-deposited films can change in a controllable and fully reversible manner by about six orders of magnitude by alternately exposing the films to ultraviolet (UV) light (hv {ge} 3.5 eV) in vacuum and reoxidizing them in ozone. The microstructure of the films was investigated using transmission electron microscopy (TEM) and electron diffraction. For this purpose, filmsmore » with a thickness of about 100 nm were deposited onto NaCl substrates. The surface and depth composition of the films were examined using Auger electron spectroscopy (AES) combined with depth profiling analysis. The depth profiles showed that all the films exhibit an extremely good in-depth uniformity, all the way to the interface with the glass substrate, regardless of their thickness. Quantitative Auger and energy dispersive x-ray (EDX) analyses were employed to determine the stoichiometry of the films. An oxygen deficiency of 2--5% has been observed with respect to the stoichiometric composition. The effects of film thickness and oxygen content in the sputtering gas on the stoichiometry were examined. Both AES and EDX analyses confirmed that the stoichiometry is invariant for these parameters.« less
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