Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Sequential infiltration synthesis for advanced lithography

Patent ·
OSTI ID:1398972
; ; ;

A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-06CH11357
Assignee:
UCHICAGO ARGONNE, LLC
Patent Number(s):
9,786,511
Application Number:
14/645,162
OSTI ID:
1398972
Country of Publication:
United States
Language:
English

References (17)

Reduction of line edge roughness in the top surface imaging process
  • Mori, Shigeyasu; Morisawa, Taku; Matsuzawa, Nobuyuki
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 6, Article No. 3739 https://doi.org/10.1116/1.590409
journal November 1998
Statistical Modeling and Simulation of Threshold Variation Under Random Dopant Fluctuations and Line-Edge Roughness journal June 2011
Hierarchical self-assembly of metal nanostructures on diblock copolymer scaffolds journal December 2001
Mobility analysis of surface roughness scattering in FinFET devices journal August 2011
Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early journal April 2012
An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling journal June 2001
Enhanced Block Copolymer Lithography Using Sequential Infiltration Synthesis journal July 2011
Etch properties of resists modified by sequential infiltration synthesis
  • Tseng, Yu-Chih; Peng, Qing; Ocola, Leonidas E.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 6, Article No. 06FG01 https://doi.org/10.1116/1.3640758
journal November 2011
Nanoscopic Patterned Materials with Tunable Dimensions via Atomic Layer Deposition on Block Copolymers journal September 2010
Hollow Inorganic Nanospheres and Nanotubes with Tunable Wall Thicknesses by Atomic Layer Deposition on Self-Assembled Polymeric Templates journal January 2007
Optical Characterization and Process Control of Top Surface Imaging journal January 1999
Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications journal April 2010
A Route to Nanoscopic Materials via Sequential Infiltration Synthesis on Block Copolymer Templates journal May 2011
High sensitive negative silylation process for 193nm lithography journal June 2000
Enhanced polymeric lithography resists via sequential infiltration synthesis journal July 2011
Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems
  • Thackeray, James W.; Orsula, George W.; Bohland, John F.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 6, Article No. 1620 https://doi.org/10.1116/1.584502
journal November 1989
Nanoscopic Morphologies in Block Copolymer Nanorods as Templates for Atomic-Layer Deposition of Semiconductors journal April 2009

Similar Records

Related Subjects

36 MATERIALS SCIENCE