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Title: Point defects in Cu 2 ZnSnSe 4 (CZTSe): Resonant X-ray diffraction study of the low-temperature order/disorder transition: Point defects in Cu 2 ZnSnSe 4 (CZTSe)

Journal Article · · Physica Status Solidi B. Basic Solid State Physics
 [1];  [2];  [3];  [4];  [4];  [3];  [3];  [5]
  1. Applied Energy Programs, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA
  2. Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA
  3. National Renewable Energy Laboratory, Golden Colorado 80401 USA
  4. Materials Science and Engineering Department, Stanford University, Stanford CA 94305 USA
  5. Applied Energy Programs, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA; Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park California 94025 USA

The interest in Cu2ZnSn(S,Se)4 (CZTS) for photovoltaic applications is motivated by similarities to Cu(In,Ga)Se2 while being comprised of non-toxic and earth abundant elements. However, CZTS suffers from a Voc deficit, where the Voc is much lower than expected based on the band gap, which may be the result of a high concentration of point-defects in the CZTS lattice. Recently, reports have observed a low-temperature order/disorder transition by Raman and optical spectroscopies in CZTS films and is reported to describe the ordering of Cu and Zn atoms in the CZTS crystal structure. To directly determine the level of Cu/Zn ordering, we have used resonant-XRD, a site, and element specific probe of long range order. We used CZTSe films annealed just below and quenched from just above the transition temperature; based on previous work, the Cu and Zn should be ordered and highly disordered, respectively. Our data show that there is some Cu/Zn ordering near the low temperature transition but significantly less than high chemical order expected from Raman. To understand both our resonant-XRD results and the Raman results, we present a structural model that involves antiphase domain boundaries and accommodates the excess Zn within the CZTS lattice.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1398877
Report Number(s):
NREL/JA-5K00-70251
Journal Information:
Physica Status Solidi B. Basic Solid State Physics, Vol. 254, Issue 9; ISSN 0370-1972
Publisher:
Wiley-Blackwell
Country of Publication:
United States
Language:
English

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Cited By (1)

The effect of stoichiometry on Cu-Zn ordering kinetics in Cu 2 ZnSnS 4 thin films journal April 2018