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Title: Polycrystalline Cu 2 O photovoltaic devices incorporating Zn(O,S) window layers

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1398607
Grant/Contract Number:
SC0004993
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Solar Energy Materials and Solar Cells
Additional Journal Information:
Journal Volume: 160; Journal Issue: C; Related Information: CHORUS Timestamp: 2017-10-07 04:02:01; Journal ID: ISSN 0927-0248
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Tolstova, Yulia, Omelchenko, Stefan T., Blackwell, Raymond E., Shing, Amanda M., and Atwater, Harry A. Polycrystalline Cu 2 O photovoltaic devices incorporating Zn(O,S) window layers. Netherlands: N. p., 2017. Web. doi:10.1016/j.solmat.2016.10.049.
Tolstova, Yulia, Omelchenko, Stefan T., Blackwell, Raymond E., Shing, Amanda M., & Atwater, Harry A. Polycrystalline Cu 2 O photovoltaic devices incorporating Zn(O,S) window layers. Netherlands. doi:10.1016/j.solmat.2016.10.049.
Tolstova, Yulia, Omelchenko, Stefan T., Blackwell, Raymond E., Shing, Amanda M., and Atwater, Harry A. Wed . "Polycrystalline Cu 2 O photovoltaic devices incorporating Zn(O,S) window layers". Netherlands. doi:10.1016/j.solmat.2016.10.049.
@article{osti_1398607,
title = {Polycrystalline Cu 2 O photovoltaic devices incorporating Zn(O,S) window layers},
author = {Tolstova, Yulia and Omelchenko, Stefan T. and Blackwell, Raymond E. and Shing, Amanda M. and Atwater, Harry A.},
abstractNote = {},
doi = {10.1016/j.solmat.2016.10.049},
journal = {Solar Energy Materials and Solar Cells},
number = C,
volume = 160,
place = {Netherlands},
year = {Wed Feb 01 00:00:00 EST 2017},
month = {Wed Feb 01 00:00:00 EST 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1016/j.solmat.2016.10.049

Citation Metrics:
Cited by: 5works
Citation information provided by
Web of Science

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  • The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In{sub 2}S{sub 3} on p-type Cu{sub 2}ZnSnS{sub 4} (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBO{sub XPS} = −0.24 ± 0.10 eV and CBO{submore » NEXAFS} = −0.18 ± 0.10 eV, whereas those of Zn(O,S) and In{sub 2}S{sub 3} were found to be spike-like with CBO{sub XPS} = 0.92 ± 0.10 eV and CBO{sub NEXAFS} = 0.87 ± 0.10 eV for Zn(O,S)/CZTS and CBO{sub XPS} = 0.41 ± 0.10 eV for In{sub 2}S{sub 3}/CZTS, respectively. The CZTS photovoltaic device using the spike-like In{sub 2}S{sub 3} buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In{sub 2}S{sub 3}/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed.« less
  • The resistivity was controlled in the range of 10{sup 3} to 10{sup −2} Ω cm in polycrystalline p-type Cu{sub 2}O sheets (incorporating sodium (Na)), which are suitable for Cu{sub 2}O-based heterojunction solar cell applications. The Na-doped Cu{sub 2}O sheets exhibited a hole concentration that ranged from 10{sup 13} to 10{sup 19 }cm{sup −3}. In particular, a hole concentration of 10{sup 13}–10{sup 16 }cm{sup −3} was obtained while maintaining a high Hall mobility above 100 cm{sup 2}/V s, and, in addition, a degenerated semiconductor exhibiting metallic conduction was realized with a hole concentration above about 1 × 10{sup 19 }cm{sup −3}. The mechanism associated with the Namore » doping can be explained by a copper vacancy produced due to charge compensation effects that result when a Na atom is incorporated at an interstitial site in the Cu{sub 2}O lattice. For solar cell applications, the use of the Cu{sub 2}O:Na sheet in a heterojunction solar cell successfully improved the obtained efficiency over that found in heterojunction solar cells fabricated using an undoped Cu{sub 2}O sheet.« less
  • No abstract prepared.
  • Cu(In,Ga)Se{sub 2} (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGSmore » absorber.« less
  • The antiferromagnetic (AFM) and superconducting (SC) phase-transition temperatures of Y{sub 1{minus}{ital x}}Pr{sub {ital x}}Ba{sub 2}Cu{sub 3{minus}{ital y}}{ital M}{sub {ital y}}O{sub {ital z}}, {ital M}=Fe,Co,Zn, were studied by magnetometry and {sup 57}Fe Moessbauer spectroscopy. For {ital z}{approximately}7, substitutions at all sites except those in the CuO{sub 2} planes (Pr,Fe,Co) cause superconductivity to disappear at {ital x}{sub {ital c}}=0.5 or {ital y}{sub {ital c}}=0.4 and antiferromagnetism to appear above {ital x}{sub {ital c}} and {ital y}{sub {ital c}}. For {ital z}{approximately}6, antiferromagnetism persists for all {ital x} and {ital y} values. On the other hand, substitution in the Cu(2) planes (Zn) suppressesmore » both superconductivity at {ital y}{sub {ital c}}=0.24 for {ital z}{approximately}7 and antiferromagnetism for {ital z}{approximately}6. No antiferromagnetism is seen for {ital z}{approximately}7.« less